Das System Gallium-Tellur

Blachnik, R.; Irle, E.

doi:10.1016/0022-5088(85)90158-4

Cited by 35 publications

(17 citation statements)

References 6 publications

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“…According to Blachnik and Irle [5] the lattice constant of pure cubic Ga 2 V Te 3 is 590.9 pm. The X-ray patterns of quenched Ga 2 V(Se 3l Te 3−3l ) solid solutions with 0 < l < 1 can be interpreted as patterns of a weakly distorted zinc-blende phase with a tetragonal symmetry (Fig.…”

Section: X-ray Measurementsmentioning

confidence: 99%

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

Kerkhoff

Leute

2004

Journal of Alloys and Compounds

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Section: X-ray Measurementsmentioning

confidence: 99%

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

Kerkhoff

Leute

2004

Journal of Alloys and Compounds

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“… 21 , 22 GeAs bulk crystalizes in a layered structure, in the space group C 2/ m , in which each Ge atom is bonded to one Ge atom and three As atoms forming distorted As 6 @Ge 2 octahedra. 23 GeAs layers, terminated by As atoms, are kept together by weak van der Waals forces and show two different types of Ge–Ge bonds. One type is parallel and the other one is perpendicular to the layer plane, highlighting the anisotropic nature of the GeAs crystal structure (see Figure 1 a).…”

Section: Introductionmentioning

confidence: 99%

Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

Grillo

Bartolomeo

Urban

et al. 2020

ACS Appl. Mater. Interfaces

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We report the fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels. The electrical transport is investigated in the 20–280 K temperature range, revealing that the p-type electrical conductivity and the field-effect mobility are growing functions of temperature. An unexpected peak is observed in the temperature dependence of the carrier density per area at ∼75 K. Such a feature is explained considering that the increased carrier concentration at higher temperatures and the vertical band bending combined with the gate field lead to the formation of a two-dimensional (2D) conducting channel, limited to few interfacial GeAs layers, which dominates the channel conductance. The conductivity follows the variable-range hopping model at low temperatures and becomes the band-type at higher temperatures when the 2D channel is formed. The formation of the 2D channel is validated through a numerical simulation that shows excellent agreement with the experimental data.

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“…Thus, one should expect similar transformation of Phase 6 into b-Ag 2 Te and Sb 2 Te 3 as represented by the light blue arrows in the diagram. Therefore, in several instances Ag 2 Te and Sb 2 Te 3 phases were recorded at room temperature by our previous extensive microscopy observations made elsewhere [10][11][12][13][14][15][16][17][18][19].…”

Section: Resultsmentioning

confidence: 99%

“…It has already been reported by various authors that there exists phase segregation in the LAST compounds [8][9][10][11] bringing about the microscopic heterogeneities with different quaternary phases formed in the main matrix. In order to understand the formation and origin of secondary phases, thereby, to predict the phase diagram, an insight into the evolution of phase segregation was provided and an extensive microstructural analysis was carried out in this study by using known pseudo-binary diagrams among Ag 2 Te, PbTe, Sb 2 Te 3 and AgSbTe 2 systems [14][15][16][17]. In addition, an attempt to establish a correlation among the quasi-ternary phase diagram, microstructure, and compositions has been made and possible mechanisms for the phase separation and phase formation are discussed.…”

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confidence: 99%

Evolution of phase segregation and eutectic structures in AgPb₁₈SbTe₂₀

Dadda

Müller

Perlt

et al. 2014

Physica Status Solidi (a)

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The evolution of phase segregation in stoichiometric quenched AgPbmSbTe2+m (m=18, Lead-Antimony-Silver-Tellurium - LAST-18) compounds was studied starting from the known pseudo-binary diagrams among Ag2Te, PbTe, Sb2Te3 and AgSbTe2. The compositions of secondary phases indicate that liquid phase during cooling, even under quenching conditions, follows mainly the liquidus line on the 2PbTe-Ag0.45Sb0.55Te1.05 quasi-binary section of the phase diagram until it reaches a critical point (18mol.% of 2PbTe) and then turns to Ag2Te- and Sb2Te3-rich sides of quasi-ternary system. This has led to the formation of various secondary phases at various stages during the solidification, whose microstructural features and morphology strongly depend upon their chemical composition. Moreover, during solidification the local compositional fluctuations of liquid phase in combination with the shift of liquid composition towards Sb-rich side of the phase diagram resulted in the development of eutectic microstructures in some regions of LAST-18 matrix phase. This suggests there exists a miscibility gap and eutectic point below 600 degrees C on the 2PbTe-Ag0.45Sb0.55Te1.05 boundary line. These eutectic lamellar structures with a cumulative composition close to LAST-3 are on the 200-500nm length scales and possess thermal conductivity of 0.55-0.65W/mK at room temperature. The low thermal conductivity of lamellar eutectic structures was later confirmed on bulk samples using laser flash analysis, where the samples were synthesized by quenching and annealing. The results clearly demonstrate that one can engineer the microstructures in LAST compounds by selecting the appropriate initial composition from quasi PbTe-Ag2Te-Sb2Te3 ternary phase diagram to lower the thermal conductivity further

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Das System Gallium-Tellur

Cited by 35 publications

References 6 publications

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

Evolution of phase segregation and eutectic structures in AgPb₁₈SbTe₂₀

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Das System Gallium-Tellur

Cited by 35 publications

References 6 publications

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

The phase diagram of the quasibinary system Ga2Te3/Ga2Se3

Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

Evolution of phase segregation and eutectic structures in AgPb18SbTe20

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Evolution of phase segregation and eutectic structures in AgPb₁₈SbTe₂₀