Deep levels controlling the electrical properties of Fe-implanted GaInP∕GaAs

Abstract

The authors investigated the electrical compensation induced by deep levels introduced in metal organic vapor phase epitaxy grown n+-InGaP∕GaAs epitaxial layers by high temperature Fe implantation. The activation of the Fe2+-related deep levels has been assessed by current-voltage analyses performed at different temperatures. In the framework of the space charge limited current model, they determined the energy location in the gap of the deep levels that control the electrical properties of the semi-insulating epilayers. A donor level which acts as an electron trap located at EC−0.5eV and a Fe-related acceptor level which is responsible for the stable increase of resistivity located at EV+0.72eV were identified.

Deep level thermal evolution in Fe implanted InP

“…6 The results of this analysis are summarized in Fig. 6 The results of this analysis are summarized in Fig.…”

“…In particular, the nature of the traps ͑donor or acceptor͒ and their energy location in the band gap can be obtained. 6. The J-V-T curves have been analyzed at the two fixed voltages, 0.1 V ͑Ohmic region͒ and 0.9 V ͑SCLC region͒, indicated by the arrows in Fig.…”

“…As an alternative to bulk or epitaxial growth, ion implantation can be used as an incorporation technique. 5,6 Moreover the authors studied the thermal evolution of the electrical compensation as a function of the annealing temperature, showing that this is closely correlated to the annealing evolution of the implant-induced damage and to the escape of the Fe atoms from substitutional sites, which in turn resulted to be controlled by the substrate n doping. Several studies have been reported in the literature on the interaction among the implanted species, the dopants, and the defects for various implantation temperatures.…”

Kinetics and Mechanism of BaLaCuS3 Oxidation

“…It is known that artificial non-oxide compounds produced for the use in the green energy technology, modern electronics and optics and thin chemistry technologies often contain heavy metals and chemical elements toxic to humans and the environment [1][2][3][4][5][6][7][8][9]. The products of their transformation/degradation induced by the contact with the chemically active air components and temperature variation may be dangerous.…”