2006
DOI: 10.1088/0960-1317/16/5/024
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Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask

Abstract: A new dry-etching method for fabricating anisotropic deep grooves on a borosilicate glass wafer is reported. The method uses a 200 µm thick bulk silicon wafer bonded to a borosilicate glass wafer by anodic bonding as an etching mask and inductively coupled plasma generated by C4F8 or CHF3 gases for etching. The measured etching rate showed that the deep reactive ion etching conditions for achieving a high etching rate are low gas pressure, high gas-flow rate, high antenna power and high bias power. The measure… Show more

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Cited by 55 publications
(44 citation statements)
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“…This means that DRIE was again carried out after the ultrasonic cleaning until the depth of the groove reached approximately 300 µm. [7]. The sidewall angle of the groove did not reach more than 80 o .…”
Section: Process For Control Of Groove Profilementioning
confidence: 92%
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“…This means that DRIE was again carried out after the ultrasonic cleaning until the depth of the groove reached approximately 300 µm. [7]. The sidewall angle of the groove did not reach more than 80 o .…”
Section: Process For Control Of Groove Profilementioning
confidence: 92%
“…This paper reports on two fabrication processes for controlling the etching profile, namely for effectively removing excessive polymer film. The obtained experimental results are compared with previous ones [7].…”
Section: Introductionmentioning
confidence: 93%
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“…The process requires a low pressure of 5-10 mTorr, since ion bombardment of the material (physical etching) plays an important role. The gas precursors used for deep etching of glass are SF 6 72 Additional gases such as He, H 2 , O 2 , or Ar may be added to control chamber pressure or for improving the quality of the etching process. Since the selectivity of the etching process is low, a relatively thick masking layer is required, such as electroplated Ni (20 lm-thick) for SF 6 chemistry, bulk silicon, 71 PECVD amorphous silicon (12 lm-thick), 70 or even a thick layer of SU-8 photoresist.…”
Section: Dry Etchingmentioning
confidence: 99%