2019
DOI: 10.1088/2053-1591/ab3b15
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Defect dependent inverted shift of band structure for ZnO nanoparticles

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Cited by 10 publications
(5 citation statements)
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“…67,68 This is due to the ZnO band edge absorption peak. 69,70 No detectable signals were observed for the silica NP mixtures.…”
Section: Resultsmentioning
confidence: 98%
“…67,68 This is due to the ZnO band edge absorption peak. 69,70 No detectable signals were observed for the silica NP mixtures.…”
Section: Resultsmentioning
confidence: 98%
“…42 The c/a ratio also provides information about the vacancies in materials. 44,45 The c/a ratio of the wurtzite structure is 1.633; however, the c/a ratios of ZnO prepared using different ash water extracts are in the range of 1.601−1.603, probably due to Zn or O vacancies created during nanostructure formation. 43 The observed values are very close to the standard JCPDS data and reported results, showing that pure-phase ZnO is successfully synthesized using different ash water extracts.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, one of the decisive factors that greatly influence the optical bandgap of the sample is defect states and their concentration within the forbidden gap. 44,58 Furthermore, depending on the dislocation density, the bandgap varies. 59 The c/a ratio of the prepared samples showed a considerable deviation indicating the presence of a defect state in materials.…”
Section: Resultsmentioning
confidence: 99%
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“…With 1% Mn-ZnO, E g decreased to 3.4 eV. The drop in E g can be related to an increase in particle size and the concentration of oxygen vacancies on the ZnO surface [ 56 ]. Localized defect states within the band gap are created by the oxygen vacancy and the related disorder, resulting in a redshift of the band gap [ 57 ].…”
Section: Resultsmentioning
confidence: 99%