Defect-dependent mechanical and electrical properties of laser-processed CuO nanowires

Abstract

Narrow bandgap p-type semiconducting metal oxide nanowires (NWs), such as copper oxide (CuO), have gained significant attention for their potential in the development of electrical nano-devices. Tailoring the mechanical and electrical properties of CuO NWs is crucial for optimizing their functionality in specific applications. In this study, we employ nanosecond laser irradiation to precisely modify the properties of individual CuO NWs by inducing point and line defects, including oxygen vacancies and dislocations. Through controlled laser irradiation, we observe a gradual enhancement in the concentration of oxygen vacancies within CuO NWs until reaching a saturation point. The accumulation of vacancies leads to a substantial residual stress, resulting in lattice distortion and misfit. This high residual stress serves as a catalyst for the nucleation of dislocations, subsequently leading to a meaningful enhancement in plasticity. Remarkably, the density of dislocations demonstrates a strong correlation with the duration of laser irradiation. Prolonged irradiation leads to a thermally activated restoration process, where the dislocation configuration transitions from a random distribution to ordered dislocation loops. Mechanical characterization tests indicate that pristine CuO NWs exhibit brittleness, while laser irradiation renders them ductile with improved plasticity. Furthermore, the laser processing of CuO NWs demonstrates an enhancement in their electrical conductivity and optical absorbance.