Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

Abstract

The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid sołution and the creation of structural defects.

Revealing the structural disturbances in Czochralski silicon by high temperature–pressure treatment

“…It is known, however, that treatment under enhanced hydrostatic pressure (HP) promotes oxygen precipitation on structural disturbances even at ∼1130 • C if done for a prolonged time (e.g. for 5 h [1]). …”