Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

Uedono, Akira; Ujihira, Yûsuke; Wei, Long; Tabuki, Y.; Tanigawa, S.; Wada, Kazumi; Nakanishi, Hideo

doi:10.1557/proc-262-325

MRS Proc.

1992

DOI: 10.1557/proc-262-325

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Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

Akira Uedono

Yûsuke Ujihira

Long Wei

et al.

Abstract: Vacancy-type defects in 60-key Be+-implanted GaAs and InP were studied by a monoenergetic positron beam.The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy.

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Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

Abstract: Vacancy-type defects in 60-key Be+-implanted GaAs and InP were studied by a monoenergetic positron beam.The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy.

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References 14 publications

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