Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Okuno, Yasuki; Ishikawa, N.; Akiyoshi, Masafumi; Ando, Hirokazu; harumoto, masaki; Imaizumi, Mitsuru

doi:10.35848/1347-4065/ab9713

Cited by 3 publications

(2 citation statements)

References 32 publications

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“…T d , for example, is an important quantity that can significantly affect the NIEL [185,186] and its accurate estimation can be accessed by AIMD simulations [187,188]. Recent results for T d in semiconductors have shown that the electronic excitations can, in general, reduce their value [122], in line with previous experimental results [189]. The effect of electronic excitations consists in weakening the atomic bonds making it easier to displace an atom from its equilibrium position.…”

Section: Improving the Model For Solar Cell Degradation Via A Multisc...supporting

confidence: 69%

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Koval¹,

Gu²,

Muñoz‐Santiburcio³

et al. 2022

Lunar Science - Habitat and Humans

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Understanding the effect of radiation on materials is fundamental for space exploration. Energetic charged particles impacting materials create electronic excitations, atomic displacements, and nuclear fragmentation. Monte Carlo particle transport simulations are the most common approach for modeling radiation damage in materials. However, radiation damage is a multiscale problem, both in time and in length, an aspect treated by the Monte Carlo simulations only to a limited extent. In this chapter, after introducing the Monte Carlo particle transport method, we present a multiscale approach to study different stages of radiation damage which allows for the synergy between the electronic and nuclear effects induced in materials. We focus on cumulative displacement effects induced by radiation below the regime of hadronic interactions. We then discuss selected studies of radiation damage in materials of importance and potential use for the exploration and settlement on the Moon, ranging from semiconductors to alloys and from polymers to the natural regolith. Additionally, we overview some of the novel materials with outstanding properties, such as low weight, increased radiation resistance, and self-healing capabilities with a potential to reduce mission costs and improve prospects for extended human exploration of extraterrestrial bodies.

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Section: Improving the Model For Solar Cell Degradation Via A Multisc...supporting

confidence: 69%

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Koval¹,

Gu²,

Muñoz‐Santiburcio³

et al. 2022

Lunar Science - Habitat and Humans

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“…11) For this reason, a prediction model of performance degradation has been previously established. 12) Parameters such as the short-circuit current (J sc ), open-circuit voltage (V oc ), and maximum power (P max ) monotonically decrease as a function of proton 11) /electron 13) fluence. This tendency is explained by the radiation degradation model proposed in Ref.…”

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confidence: 99%

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

YAMANE¹,

Futamura²,

Genjo³

et al. 2022

Jpn. J. Appl. Phys.

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This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.

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Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

Yamane

Maki

One

et al. 2022

Journal of Applied Physics

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This study presents a new model for point-defect modification in III-V-N alloys through first-principle calculations and several validation experiments conducted in our previous study, which explain the enhanced crystallinity of III-V-N alloys caused by proton irradiation and rapid thermal annealing (RTA). Validation experiments clarified that the conversion efficiency of the GaAsPN solar cell increased after proton irradiation followed by RTA, whereas that of the GaP solar cell decreased after the same process. Thus, the improved crystallinity of the GaAsPN alloy by this process is attributed to the decrease in nitrogen-related point defects in the crystal. The detailed annihilation mechanism of the nitrogen-related point defect was then studied using first-principle calculations demonstrating that the representative nitrogen-related point defects can change to a lower-energy state when a vacancy forms at its neighboring group V site, leading to the annihilation of the defects. It was concluded that vacancies created by proton irradiation enhance the annihilation of nitrogen-related point defects.

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Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Cited by 3 publications

References 32 publications

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Modeling Radiation Damage in Materials Relevant for Exploration and Settlement on the Moon

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

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