2012
DOI: 10.1364/ao.51.000365
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Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Abstract: We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far… Show more

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Cited by 63 publications
(49 citation statements)
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“…We explore in particular the improvements in quantum efficiency beyond that in our recent work [16][17][18] in Section 2 and describe additional work for towards increasing throughput via other optical surfaces in Section 3. Finally, we discuss the theoretical overall throughput of FIREBall-2 as compared to FIREBall-1 in Section 4.…”
Section: Changes From Fireball-1mentioning
confidence: 99%
See 1 more Smart Citation
“…We explore in particular the improvements in quantum efficiency beyond that in our recent work [16][17][18] in Section 2 and describe additional work for towards increasing throughput via other optical surfaces in Section 3. Finally, we discuss the theoretical overall throughput of FIREBall-2 as compared to FIREBall-1 in Section 4.…”
Section: Changes From Fireball-1mentioning
confidence: 99%
“…16,17 Silicon is highly reflective in the UV (>60%) so reducing reflection is a simple way to increase the QE without modifying the CCD itself. At visible wavelengths, anti-reflection coatings have been highly refined to produce near 100% transmission at a selected wavelength.…”
Section: Advanced Ultraviolet Anti-reflection Coatingsmentioning
confidence: 99%
“…Additional multi-layer coatings are required to block the rest of the silicon waveband to the required levels. Figure 4 State-of-the-art in single layer UV AR coatings for silicon 12 …”
Section: Silicon Surface Treatmentsmentioning
confidence: 99%
“…A detailed account of these results have been submitted for publication [15]. Briefly, thinned and delta-doped standard and electron multiplying CCDs (EMCCDs) were both used in a variety of tests to measure absolute QE.…”
Section: Introductionmentioning
confidence: 99%
“…With functional devices, we are able to directly measure the effect the AR coating has on transmission into the Si. Papers are in preparation on the stability and testing of these devices, as well as on detailed functional results and future FUV detector technology [15,16].…”
Section: Introductionmentioning
confidence: 99%