Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Maji, Nilay; Panda, J.; Kumar, Anil

doi:10.1007/s00339-020-04214-w

Cited by 6 publications

(4 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The magnetization measurement validates that the NZFO thin film displays improved ferrimagnetic hysteresis behavior compared to that of the NFO film (Maji et al, 2021) even at room temperature. The room temperature saturation magnetization (M s ) of the NFO film (Maji et al, 2021) is found to be 74 emu/c.c., whereas for the NZFO film, the value of M s becomes 364.64 emu/c.c. This enhanced ferrimagnetism makes NZFO a promising applicant as an excellent spin injector at room temperature.…”

Section: Magnetic Property Studysupporting

confidence: 68%

“…The obtained Hanle signal can be best fitted by Eq. 5 (Figure 12A), and the spin lifetime of 99 ps has been achieved at 300 K. Comparing with the result of NFO/ MgO/p-Si (Maji et al, 2021), we can confirm that the room temperature spin lifetime in p-Si is enhanced by almost 142% by using the NZFO/MgO/p-Si heterostructure. Enhanced spin polarization of NZFO may be one of the possible reasons for getting this higher value of spin lifetime in our device.…”

Section: Electrical Spin Injection Accumulation and Detection In P-sisupporting

confidence: 61%

See 1 more Smart Citation

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

2021

Self Cite

View full text Add to dashboard Cite

In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magneto-transport characteristics have been explored in the temperature range of 100–300 K. The current-voltage (I-V) characteristics of the heterojunction have been recorded, which displayed an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The application of an external magnetic field parallel to the plane of the NZFO film causes the current (I) across the junction to decrease, clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The root of displaying positive magnetoresistance in our heterojunction has been well justified using the standard spin injection model. The electrical injection of spin-polarized carriers and its accumulation and detection in a p-Si channel have been demonstrated using the NZFO/MgO tunnel contact using a three-terminal (3-T) Hanle device. The parameters such as spin lifetime (99 ps), spin diffusion length (276 nm), and spin polarization (0.44) have been estimated from the Hanle curve detected in our heterostructure at room temperature, making the Ni0.65Zn0.35Fe2O4/MgO/p-Si device a very favorable promising junction structure in the field of spintronics for several device appliances in the future.

show abstract

Section: Magnetic Property Studysupporting

confidence: 68%

Section: Electrical Spin Injection Accumulation and Detection In P-sisupporting

confidence: 61%

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…[ 11 ] The feasible tunability of the conductivity over a large range via the growth conditions is beneficial for the design of the NCO‐based applications with various circuit loads, especially important for oxide spintronics. [ 29 , 30 , 31 ]…”

Section: Resultsmentioning

confidence: 99%

“…[11] The feasible tunability of the conductivity over a large range via the growth conditions is beneficial for the design of the NCO-based applications with various circuit loads, especially important for oxide spintronics. [29][30][31] Figure 3a displays the longitudinal magnetoresistance MR, defined as MR =[𝜌 xx (H) − 𝜌 xx (0)]/𝜌 xx (0) through resistivity (𝜌 xx ) variation under an out-of-plane external field (H), of a semiconducting NCO film (T S = 375 °C, 50 nm) measured at various temperatures. The observed negative magnetoresistance originates from the spin-dependent carrier scattering, [32,33] while the superimposed butterfly-shaped hysteresis is associated with magnetization reversals in the ferrimagnetic film.…”

Section: Longitudinal Transportmentioning

confidence: 99%

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy

Lv,

Huang,

Zhang

et al. 2023

Advanced Science

View full text Add to dashboard Cite

Their high tunability of electronic and magnetic properties makes transition‐metal oxides (TMOs) highly intriguing for fundamental studies and promising for a wide range of applications. TMOs with strong ferrimagnetism provide new platforms for tailoring the anomalous Hall effect (AHE) beyond conventional concepts based on ferromagnets, and particularly TMOs with perpendicular magnetic anisotropy (PMA) are of prime importance for today's spintronics. This study reports on transport phenomena and magnetic characteristics of the ferrimagnetic TMO NiCo2O4 (NCO) exhibiting PMA. The entire electrical and magnetic properties of NCO films are strongly correlated with their conductivities governed by the cation valence states. The AHE exhibits an unusual sign reversal resulting from a competition between intrinsic and extrinsic mechanisms depending on the conductivity, which can be tuned by the synthesis conditions independent of the film thickness. Importantly, skew‐scattering is identified as an AHE contribution for the first time in the low‐conductivity regime. Application wise, the robust PMA without thickness limitation constitutes a major advantage compared to conventional PMA materials utilized in today's spintronics. The great potential for applications is exemplified by two proposed novel device designs consisting only of NCO films that open a new route for future spintronics, such as ferrimagnetic high‐density memories.

show abstract

Influence of composition ratio on structural, optical and magnetic properties of NiFe2O4/(1−x)MnO−xCoO composites

Mohamed

Ellatief

El‐Naggar

et al. 2022

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Cited by 6 publications

References 29 publications

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy

Influence of composition ratio on structural, optical and magnetic properties of NiFe2O4/(1−x)MnO−xCoO composites

Contact Info

Product

Resources

About

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Cited by 6 publications

References 29 publications

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo2O4 Films with Robust Perpendicular Magnetic Anisotropy

Influence of composition ratio on structural, optical and magnetic properties of NiFe2O4/(1−x)MnO−xCoO composites

Contact Info

Product

Resources

About

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy