Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-µm-Thick Silicon Wafer

Munakata, Chusuke

doi:10.1143/jjap.44.139

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…It should be noted that sp tends towards the first value of 14 ms. All vp 's are around 1.7 ms and fairly constant as theoretically expected. 1,8) They are, however, a little bit longer than the first one of 1.3 ms.…”

mentioning

confidence: 89%

Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers

Munakata

Suzuki

2006

jjap

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To date, various connection rerouting methods for connection-oriented mobile networks have been proposed. The previous methods, however, are limited to specific topologies or environments. In this paper, we propose the connection-information-based rerouting widely applicable to various connection-oriented mobile networks. This method requires neither a specific topology nor a complex connection, enables fast rerouting, provides appropriate route optimality, and can be extended easily.

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mentioning

confidence: 89%

Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers

Munakata

Suzuki

2006

jjap

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“…On the other hand, lead-free piezoelectric ceramics, such as (K,Na)NbO 3 (KNN)-based ceramics, (Bi 0:5 Na 0:5 )-TiO 3 -based ceramics, [24][25][26][27] (Bi 0:5 K 0:5 )TiO 3 -based ceramics, 25,28) ferroelectric ceramics with a tungsten bronze structure, 29) and bismuth layer-structured ferroelectrics [30][31][32][33] have been extensively studied recently, and several candidates were proposed in the basic research stage. In our recent study, we also proposed KNN-based multilayer piezoelectric ceramics with nickel inner electrodes.…”

Section: Introductionmentioning

confidence: 99%

Reliability of Nickel Inner Electrode Lead-Free Multilayer Piezoelectric Ceramics

Hayashi¹,

Kawada²,

Kimura³

et al. 2012

Jpn. J. Appl. Phys.

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The environmental reliability of lead-free (K,Na)NbO3-based multilayer ceramics with nickel inner electrodes was studied. The multilayer specimen with good piezoelectric properties was successfully obtained by adding excess zirconium to a (K,Na)NbO3-based composition. Excess zirconium probably accelerated the solid solution of potassium into the crystal lattice and prevented potassium evaporation. The electric resistivity and piezoelectric properties of the ceramics were extremely stable at a high temperature (85 °C), a low temperature (-40 °C), and a high humidity [85 °C/85% relative humidity (RH)]. Their change rates were below 10% in 500 h studies. The stability was also high in the thermal shock (from -40 to 85 °C) test. It is thus concluded that the (K,Na)NbO3-based composition containing excess zirconium is a good candidate material for nickel electrode multilayer ceramics.

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“…1) Since the discovery of high-mobility organic materials, 2,3) many theoretical and experimental studies have been carried out to clarify the operation of OFETs. [4][5][6][7][8] The performance of OFET has remarkably advanced, and many important aspects concerning the operation mechanism of OFETs have been discovered. For example, it was found that carrier injection dominates the OFET characteristics 9,10) and that ambipolar operation is observed in many OFETs.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

Yoshita

Lim

Manaka

et al. 2009

jjap

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Analysis of pentacene field-effect transistors (FETs) with a ferroelectric gate insulator, i.e., a copolymer of vinylidene fluoride and tetrafluoroethylene [P(VDF-TeFE)], as an element of Maxwell-Wagner system revealed that the turnover of spontaneous polarization in P(VDF-TeFE) modulated the amount of charge injected from the source electrode and accumulated in the FET channel. This analysis well accounted for the hysteresis behavior observed in the I ds -V gs characteristics. Pentacene FETs using polyimide gate insulator also showed a similar hysteresis behavior in the I ds -V gs characteristics, but that the results were caused by carrier injection from the gate electrode into the polyimide gate insulator. #

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Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-µm-Thick Silicon Wafer

Cited by 6 publications

References 11 publications

Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers

Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers

Reliability of Nickel Inner Electrode Lead-Free Multilayer Piezoelectric Ceramics

Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

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