Dependence of the growth rate, quality, and morphology of diamond coatings on the pressure during the CVD-process in an industrial hot-filament plant

Schwarz, S.; Rosiwal, Stefan; Frank, Martin; Breidt, D.; Singer, Robert F.

doi:10.1016/s0925-9635(01)00702-6

Cited by 46 publications

(29 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the highest growth rate (at 20 mbar) is almost 4 times the slowest growth rate (at 50 mbar). Behavior of growth rate for pressures > 20 mbar is in agreement with that observed by Schwarz et al [23] however magnitudes of growth rate differ significantly. Schwarz et al [23] found the fastest growth rate (0.7 µm/h) at 3 mbar while growth rate at 50 mbar was only 0.2 µm/h.…”

Section: Effect On Electrical Resistivitysupporting

confidence: 90%

“…Two more peaks located at 1140 cm −1 and 963 cm −1 are observed among which 1140 cm −1 peak can be associated with amorphous network as reported in the literature [33,34] or it might be due to Ne lamp whereas the Raman signal at 963 cm −1 might be a 2nd-order silicon peak. The spectrum observed at 10 mbar is similar to that of Schwarz et al [23] observed at 3 mbar. At 20 mbar pressure, diamond peak has been shifted back to its natural position i.e.…”

Section: Effect On Crystal Qualitysupporting

confidence: 87%

“…Similar type of diamond crystal morphology was observed by Schwarz et al [23] who also noticed the maximum (or large) sized crystals of ≈ 2 µm at 20 mbar pressure but at a pressure of 50 mbar diamond grain size decreased to ≈ 1 µm. They also observed the secondary nucleation on diamond crystals which degrade the quality of diamond crystals but in the present case no secondary nucleation was noticed which is a good indication of the high quality of diamond crystals.…”

Section: Effect On Morphologysupporting

confidence: 86%

“…5d,e. However, an extra weak peak at 1580 cm −1 is observed at a pressure of 40 mbar, such a Raman vibration was also noticed by Schwarz et al [23] at 3 mbar pressure. This is actually the G-peak which is related to the highly oriented graphite phase (HOPG).…”

Section: Effect On Crystal Qualitysupporting

confidence: 76%

“…Dependence of the concentration of atomic hydrogen on the pressure in a region between 7 and 73 mbar was investigated via REMPI by Smith et al [21]. On the other hand, nanocrystalline diamond (NCD) films on silicon have also been synthesized at low temperatures of 450-550 • C and low pressure of ≈ 9 mbar by HFCVD in CH 4 +H 2 mixture by Tianliang Hao et al [22] and by Schwarz et al [23] employing a 1% CH 4 in H 2 gas mixture at pressure from 50 to 1.25 mbar. Several diamond growth models have also been tested by various researchers to explain the pressure dependence of the growth rate [17,[24][25][26].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

2017

View full text Add to dashboard Cite

Polycrystalline diamond films with preferred (111) and (222) facets were fabricated inside hot filament chemical vapour deposition reactor on silicon wafers using a mixture of 1% methane in hydrogen at various reactor pressures ranging from 10 to 50 mbar. Regarding characterization of diamond films, internal texture, surface morphology, quality of diamond and electrical conductivity were investigated using X-ray diffraction, scanning electron microscopy, the Raman spectroscopy and four-point-probe van der Pauw techniques, respectively. Results of these studies demonstrate that polycrystalline diamond structure is grown in random orientation with (111) facet being dominant showing sharp grain boundaries. Moreover, growth rate was found to increase with pressure up to 20 mbar and then decreased for further rise in pressure. That is why grain density is high with relatively smaller grains at higher pressures caused by higher nucleation rates. In contrast, electrical resistivity decreased ≈ 3 orders of magnitude showing a minimum at 2.9 × 10 6 Ω cm as pressure was increased in the reactor. Reactor pressure during film growth resulted in poor surface morphology, absence of sp 3 bonds and low resistivity. Hence, decrease of resistivity makes diamond films desirable for many electrical applications in semiconducting/electronic devices.

show abstract

Section: Effect On Electrical Resistivitysupporting

confidence: 90%

Section: Effect On Crystal Qualitysupporting

confidence: 87%

Section: Effect On Morphologysupporting

confidence: 86%

Section: Effect On Crystal Qualitysupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

2017

View full text Add to dashboard Cite

show abstract

On the Reaction Kinetics of Chemically Active Molecular Microwave Plasmas

Stancu

Pipa

Lombardi

et al. 2005

Contrib. Plasma Phys.

View full text Add to dashboard Cite

Key words Microwave plasmas, reaction kinetics, degree of dissociation, hydrogen, methyl radical, quantum cascade laser, boron monoxide. PACS 52. 20, 52.25, 52.75, 52.80 Recent studies of phenomena in molecular non-equilibrium microwave plasmas, which have been performed within the framework of the DFG-Sonderforschungsbereich 198, project A12, are presented in this review article. Special attention is devoted to the properties and kinetics of transient molecular species. The experimental methods used were optical emission and absorption spectroscopy. The main objectives of this contribution were threefold: (i) the determination of the degree of dissociation of hydrogen in plasmas, (ii) the quantitative detection of the methyl radical, and (iii) plasma process monitoring using quantum cascade lasers.

show abstract

Effect of pressure on the growth of boron and nitrogen doped HFCVD diamond films on WC–Co substrate

Wang

Shen

Sun

et al. 2015

Surface & Interface Analysis

View full text Add to dashboard Cite

Boron and nitrogen compounds are added in the acetone/hydrogen gas mixture to deposit hot filament chemical vapor deposition (HFCVD) diamond films on the cobalt cemented tungsten carbide (WC-Co) substrate under the pressure of 1-4 kPa. The asdeposited diamond films are characterized by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), X-ray diffraction (XRD) spectroscopy and Raman spectroscopy. The results reveal that the surface morphology, growth rate, structure and quality of the diamond films vary with the pressure and the type of the impurity addition. The diamond grains tend to develop into the nanometer scale with the decrease of the pressure. However, adding of boron or nitrogen impurities in the gas mixture will weaken the nanocrystallization effect by reducing the carbon supersaturation. Density functional theory (DFT) calculations indicate that co-adsorption of B and N containing radicals can favor the adsorption of CH 3 on diamond (100) surface. Thus, at low pressure of 1 kPa, large grained cubic (100) facet diamond rather than typical nanometer diamond is produced for B-N coaddition gas mixture. The present results appear to be useful to efficiently synthesize high quality doped diamonds with desirable properties for mechanical application.

show abstract

Dependence of the growth rate, quality, and morphology of diamond coatings on the pressure during the CVD-process in an industrial hot-filament plant

Cited by 46 publications

References 11 publications

Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

On the Reaction Kinetics of Chemically Active Molecular Microwave Plasmas

Effect of pressure on the growth of boron and nitrogen doped HFCVD diamond films on WC–Co substrate

Contact Info

Product

Resources

About