Depth dependent order/disorder transitions in iron-rich thin films grown on i-Al–Pd–Mn studied by medium energy ion scattering

Noakes, T.C.Q.; Parle, Joseph; Nugent, P. J.; Sharma, H. R.; Smerdon, J. A.; Bailey, Paul; McGrath, R.

doi:10.1016/j.susc.2013.09.023

Cited by 1 publication

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“…Medium-energy ion scattering (MEIS) has also been applied to obtain similar information on the relaxation and composition of the same Al-Pd-Mn surface [19]. In addition, it has been used to investigate the growth of Cu [20], Bi [21]and Fe [22] films and Au-Al alloy formation [23] on the same surface, although it has not yet been possible to obtain adsorbate geometries from MEIS studies. Similarly, X-ray photoelectron diffraction has been used to obtain information on the surface terminations of the clean surfaces of quasicrystals [24][25][26][27][28], but the technique is not well-suited to the study of adsorbates on quasicrystals [28].…”

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confidence: 99%

X-ray standing wave study of Si clusters on a decagonal Al-Co-Ni quasicrystal surface

et al. 2015

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Quantitative adsorption structure determinations on quasicrystals are scarce because most techniques for measuring surface structures are not well suited to the complex and infinite unit cells of quasicrystals. The normal incidence standing x-ray wave field technique presents a solution to these problems because it can be made inherently surface sensitive and does not involve extensive computational effort. We describe a method for applying this technique to adsorbates on quasicrystals, with specific application to a submonolayer of Si atoms on a decagonal Al-Co-Ni surface. We demonstrate the sensitivity of the technique to both adsorption site and geometry, leading to the conclusion that the Si atoms, which form 6-atom pentagonal clusters, have an average height of 1.77 ± 0.05 Å above pentagonal hollow sites, with a significant height variation among the Si atoms in the cluster. In particular, the central Si atom sits more deeply than the five surrounding Si atoms, which are, on average, 2.7 Å away from the central Si atom. Although this study was performed on a decagonal quasicrystal that is periodic perpendicular to the surface, we describe how the technique can be applied to cases where that is not true.

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