Der Gd-neutronenzähler

Feigl, B.; Rauch, H.

doi:10.1016/0029-554x(68)90250-4

Cited by 44 publications

(6 citation statements)

References 6 publications

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“…Hence, there is no clear advantage over 10 B-or LiF-coated devices. Many groups have reported on Gd-coated devices [10][11][12][13][14]. The fundamental difficulty with Gd-coated devices arises from mixed radiation field measurements where background gamma ray contamination complicates the spectrum.…”

Section: Gd-based Coatingsmentioning

confidence: 99%

Recent results from thin-film-coated semiconductor neutron detectors

McGregor

Klann

Sanders

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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Semiconductor based thermal neutron detectors provide a compact technology for neutron detection and imaging. Such devices can be produced by externally coating semiconductor charged particle detectors with neutron reactive films that convert free neutrons into charged-particle reaction products. Commonly used films for such devices utilize the 10 B(n,a) 7 Li reaction or the 6 Li(n,a) 3 H reaction, which are attractive due to the relatively high energies imparted to the reaction products. Unfortunately, thin film or "foil" type thermal neutron detectors suffer from self-absorption effects that ultimately limit neutron detection efficiency. Design considerations that maximize the efficiency and performance of such devices are discussed. Linear arrays fabricated from thin-film-coated pixel detectors are presented with results.

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Section: Gd-based Coatingsmentioning

confidence: 99%

Recent results from thin-film-coated semiconductor neutron detectors

McGregor

Klann

Sanders

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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“…one to tens of microns) conversion films or foils (see the list of isotopes in table 1) to generate primary reaction products (i.e. moderate-energy charged particles) [47,[174][175][176][177][178][179][180][181][182]. Given the resulting bulk-like interactions for the reaction products and 2π transduction geometry in the planar configuration, total device efficiencies were inherently limited, which rendered this class of devices unpopular despite their relative promise [183][184][185].…”

Section: Indirect-conversion Heterostructuresmentioning

confidence: 99%

“…Despite the above limitations, optimization of these planar designs, especially towards specific applications [7,[186][187][188][189][190][191][192][193][194][195][196][197][198][199], included the use of alternative conversion isotopes or com-plexes thereof [177,[200][201][202][203][204][205][206][207][208][209][210][211][212][213][214], large-bandgap and various resistivity semiconductors [30,45,190,200,[215][216][217][218][219][220][221][222][223], gamma-ray subtraction/discrimination [224][225][226][227]…”

Section: Indirect-conversion Heterostructuresmentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

125

111

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Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

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“…Most common neutron interactions that have been used for thermal neutron detectors are the 10 B(n, α) 7 Li reaction and the 6 Li(n, α) 3 H reaction due to their high energies of reaction product [10]. Other neutron reactions such as 157 Gd(n, γ) 158 Gd and the 113 Cd(n, γ) 114 Cd have been also used [11,12]. 10 The calculated average range for a 0.840 MeV 7 Li ion in pure 10 B film is 1.6 mm and the average range for a 1.47 MeV alpha particle is 3.6 mm [1].…”

Section: Introductionmentioning

confidence: 99%