Trans. Electr. Electron. Mater.
 2024
DOI: 10.1007/s42341-024-00550-3
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Design and Analysis of Novel Heterodielectric Double Metal(DM)-Triple Gate-Tunnel Field-Effect Transistors(FET): A Path to Ultra-Low Power Implementations

A. Sharon Geege,
T. S. Arun Samuel,
P. Vimala
et al.
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