Design and characteristics for a 4 µm period permalloy bubble device

Yamagishi, Kazuo; Yanase, Toshihiko; Amatsu, M.; Inoue, Hiroshi; Orihara, S.

doi:10.1109/tmag.1983.1062793

Cited by 9 publications

(1 citation statement)

References 7 publications

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“…This problem is by no means as simple as it sounds because we must be able to make closed propagation tracks with the patterns we choose, and the symmetry of the pattern may mean that left-hand turns and right-hand turns will look quite different or even that the turns needed to close a track at either end will look quite different although they have the same handedness. Examples of this kind of problem can be seen in the high density tracks, used in the recent bubble memory devices, which have been published: figures 2 and 3 of Tao et al (1983) and figure 12 of Yamagishi et al (1983).…”

Section: Propagation Tracks Using Permalloymentioning

confidence: 99%

Magnetic bubble domain devices

O'Dell

1986

Rep. Prog. Phys.

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The invention of a number of interesting magnetic bubble domain devices over the past eighteen years, for computer memory, data-flow data processing and optical image processing, has brought many new and interesting problems to the attention of physicists. These problems, in materials, particularly crystal growth, in magnetic domain dynamics, in the physics of ion implantation, in complex magnetic field calculations and in magneto-optics are reviewed and discussed. It is concluded that we have here a particularly significant example of the interaction between technology and science.

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Section: Propagation Tracks Using Permalloymentioning

confidence: 99%

Magnetic bubble domain devices

O'Dell

1986

Rep. Prog. Phys.

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Experimental Ion-Implanted Bubble Memory Device With 16-μm²Cell

Nelson

Muehlner

Rana

et al. 1984

At&T Bell Laboratories Technical Journal

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This paper describes a 4‐μm‐period (16 μm2/bit) magnetic bubble device based on ion‐implanted propagation patterns. Single‐layer LaSmLuBiGa—IG films were implanted with Ne+ and He+ ions using densified photoresist masking patterns. Coarse (three eighths of a period) minimum features were used in the Permalloy and Al‐Cu levels. A 21‐Oe overlap bias range was obtained for generation, propagation, transfer, and detection at 55‐Oe drive. Generation and detection were demonstrated to have a 39‐Oe bias range at 44‐Oe drive, and a 39‐Oe bias range for minor‐loop propagation was obtained at ≥33‐Oe drive.

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