Design and evaluation of UKRI-MPW0: a monolithic HV-CMOS pixel sensor with backside biasing

Abstract

High-Voltage CMOS (HV-CMOS) pixel sensor technology is the most promising route for achieving thin, monolithic pixel detectors with excellent radiation tolerance, as required by future tracking applications in physics experiments, such as the High Luminosity LHC. This paper introduces a U.K. Research and Innovation funded Multi-Project Wafer prototype chip UKRI-MPW0, which is an HV-CMOS pixel sensor designed to push the performance parameters of these detectors. Having a novel sensor cross-section optimised for backside biasing to unprecedented high voltages, UKRI-MPW0 demonstrates the capability to withstand bias voltages of up to 600 V, surpassing the current state-of-the-art and promising enhanced radiation tolerance. The paper provides a detailed description of the design and performance evaluation results of UKRI-MPW0.