Design and Implementation of a Three-operand Multiplier through Carbon Nanotube Technology

Abstract

Abstract-Multiplication scheme is one of the most essential factors, which is time consuming. Designers and manufacturers of processors emphasis on methods which would not only perform the multiplication scheme in a rapid manner, but would reduce the physical aspect of the design as well; hence, a reduction in power consumption. Addition is one of the fundamental factors in multiplication. Pre-designing of circuits and transistors' levels used to be made through Metal Oxide Semiconductor Field Effect Transistor (MOSFET), but now, due to scaling and difficulties thereof, new technologies like Single Electron Transistor (SET), Quantum-dot Cellular Automata (QCA) and Carbon Nanotube Field Effect Transistor (CNFET) are introduced. Among the new technologies, CNFET has become center of attention due to similarities in electronic features in relation to MOSFET. A comparison made between CNFET with MOSFET technologies indicate that, power delay product (PDP) and power leakage can be less in nanotube transistors. Field effect transistor circuit's simulations are accomplished through HSPICE simulator. The simulation results indicate that this proposed Three-operand Carbon Nanotube Multiplier has a better performance in comparison with the threeoperand multiplication done on computers nowadays, which we call it classical multiplier in this article.

A Novel 4×4 Universal Reversible Gate as a Cost Efficient Full Adder/Subtractor in Terms of Reversible and Quantum Metrics

“…Full adder is one of the most important units in arithmetic circuits, and its performance could affect the efficiency of the whole system [3,4,5]. Consequently, it is in the interest of researchers to come up with new ideas so that, their designs have higher performance and low power consumption.…”

A New High-Performance Bridge Structure for 4- to-2 Compressor using CMOS and CNFET Technology

“…Results of elementary experiments conducted on semiconductor single walled CNFETs demonstrate equivalent manner like that of MOSFETs. CNFET technology is qualified to become an appropriate replacement for MOSFET at nanoscale, due to the good electric attributes of this technology, including timely switching and acceptable current-voltage conversion [11,14,15]. With respect to that of MOSFET, these transistors have high-speed and low-power consumption.…”

“…With respect to that of MOSFET, these transistors have high-speed and low-power consumption. Another advantage of CNFET is its appropriate function at low-input voltages [11]. Actually, carbon nanotube (CNT) is a sheet of graphite that is rolled up along a wrapping vector [16].…”

“…To generate smaller chips, scalability is applied which has led to challenges in MOSFET characteristics [11], since researchers pursue an appropriate replacement for MOSFET technology. Results of elementary experiments conducted on semiconductor single walled CNFETs demonstrate equivalent manner like that of MOSFETs.…”

“…The advantages and performance of compressor cells are understood via gate level analysis. The real implementation of these cells is based on the final figs of merits namely area, delay, and power consumption [10,11]. In this paper, new 4-to-2 compressor cells are presented using a novice method.…”