Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Zanella, Frédéric; Marjanović, Nenad; Ferrini, R.; Gold, Herbert; Haase, A.; Fian, Alexander; Stadlober, Barbara; Müller, Robert N.; Genoe, Jan; Hirshy, Hassan; Drost, A.; König, M.; Lee, K.-D.; Ring, J.; Prétôt, Roger; Enz, Christian; Sallèse, Jean-Michel

doi:10.1016/j.orgel.2013.07.035

Cited by 17 publications

(5 citation statements)

References 12 publications

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“…Vertical TFTs were created to achieve self-aligned small channels (36,37); however, achieving high-device performance requires precise control of device fabrication. UV light exposure after electrode patterning can be used to generate a hydrophilic channel between the electrodes, where OSCs can be selectively isolated and deposited (38)(39)(40). However, this method is limited to transparent substrates and only short channels (<500 nm).…”

mentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost largearea electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit halfadder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.organic semiconductors | patterning | small molecules | transistors | circuits

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mentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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Section: High‐resolution Printing Technologiesmentioning

confidence: 99%

“…Instead, both the channel length and contact length ( L c ) must be reduced, which requires both high‐resolution line width/spacing and accurate alignment. Self‐aligned NIL aggressively scales both the channel length and contact length, which enables fast circuit operation . Gold and coworkers developed self‐aligned flexible organic TFTs and ring‐oscillators with channel lengths as low as 0.5 µm and contact lengths of about 200 nm (Figure c).…”

Section: High‐resolution Printing Technologiesmentioning

confidence: 99%

“…Self‐aligned NIL aggressively scales both the channel length and contact length, which enables fast circuit operation . Gold and coworkers developed self‐aligned flexible organic TFTs and ring‐oscillators with channel lengths as low as 0.5 µm and contact lengths of about 200 nm (Figure c). Gate electrodes patterned by UV NIL were used as a photo mask for the patterning of source/drain electrodes, thereby ensuring a submicron contact length.…”

Section: High‐resolution Printing Technologiesmentioning

confidence: 99%

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Recent Progress in the Development of Printed Thin‐Film Transistors and Circuits with High‐Resolution Printing Technology

2016

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Printed electronics enable the fabrication of large‐scale, low‐cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high‐speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin‐film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high‐resolution printing technologies and strategies to enable high‐resolution patterning. The main focus of this report is on obtaining printed electrodes with high‐resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential.

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“…[1][2][3][4][5] OTFTs dominate in active-matrix flat-panel displays (AMFPDs) as switching devices, which is attributed to their low-temperature processing, mechanical flexibility, large-area manufacturing, and light weight. [6][7][8][9][10] OTFTs using pentacene as the active channel are one of the most widely studied organic semiconductors, exhibiting mobility and switching ratio electrical performance levels that are no worse than those of hydrogenated amorphous silicon (a-Si:H), widely used in the display industry. [11][12][13] Pentacene-based OTFTs have two typical structures: top-contact (TC) structure and bottom-contact (BC) structure.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of top-contact pentacene-based organic thin-film transistors with short channels using two-step SU8/poly(vinyl alcohol) lift-off photolithography process

Fan¹,

Lin²,

Lee³

et al. 2016

Jpn. J. Appl. Phys.

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We propose a two-step SU8/poly(vinyl alcohol) (PVA) lift-off photolithography scheme for fabricating top-contact pentacene-based organic thin-film transistors (OTFTs) with small channels. The bilayer of PVA and SU8 will not damage the pentacene channel layer in the lift-off photolithography process used in forming the patterned pentacene channel layer and source/drain metal electrodes. We demonstrate a device that not only obtains a 5 µm short channel length for source/drain metal-electrode patterning but also avoids fringe current resulting from pentacene channel layer patterning. The field-effect mobility and threshold voltage of the pentacene-based OTFTs were changed from 0.29 to 0.12 cm2 V−1 s−1 and from −5.74 to −3.19 V by varying the channel length from 50 to 5 µm, respectively. The proposed scheme is a good candidate for use in the design and fabrication of high-performance short-channel organic electronics.

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Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Cited by 17 publications

References 12 publications

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Recent Progress in the Development of Printed Thin‐Film Transistors and Circuits with High‐Resolution Printing Technology

Fabrication of top-contact pentacene-based organic thin-film transistors with short channels using two-step SU8/poly(vinyl alcohol) lift-off photolithography process

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