2008
DOI: 10.1016/j.sse.2008.06.033
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Design and optimization of the SOI field effect diode (FED) for ESD protection

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Cited by 30 publications
(13 citation statements)
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“…3) and the field-effect diode (FED) (Fig. 4) were developed [23][24][25] based on the structures proposed in [26][27][28]. These devices combine the features of a P-N-P-N SCR to block leakage current during normal operating conditions, with a forward-biased P-N junction diode to shunt high current rapidly during ESD.…”
Section: Scr Structurementioning
confidence: 99%
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“…3) and the field-effect diode (FED) (Fig. 4) were developed [23][24][25] based on the structures proposed in [26][27][28]. These devices combine the features of a P-N-P-N SCR to block leakage current during normal operating conditions, with a forward-biased P-N junction diode to shunt high current rapidly during ESD.…”
Section: Scr Structurementioning
confidence: 99%
“…4) works in contexts where a bias voltage above 1 V is available, it is necessary to find solutions suitable for supply voltages near 1 V or below in highperformance integrated circuits. A limitation has been identified [25] in device design. If the P-well doping is not high enough, during normal operation, the high common-emitter gain of the N-inversion/P-well/N+ region induces lateral bipolar junction transistor (LBJT) effects even at low anode voltages, below V dd , which results in unwanted turn-on and latch-up behavior when the device is expected to be in the forward-blocking mode.…”
Section: Improved Fed Structurementioning
confidence: 99%
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“…Although similar to TCCT, the FED structure offers unique advantages, deriving from the induced rather than the built-in nature of the FED thyristor. We have previously used the FED for electrostaticdischarge protection of SOI CMOS chips, and discussed its design and operation in detail [10], [11]. We have also recently designed and analyzed an FED-based DRAM-like memory cell [12].…”
Section: Introductionmentioning
confidence: 99%
“…Section IV presents an alternate Write 1 scheme. Finally, the conclusions are presented in Section V. All the results presented below were obtained by 2-D isothermal numerical device simulations [11], [13]. The mobility models used consider the effect of impurities, temperature dependence, electron-hole scattering, and high field saturation [14], [15].…”
Section: Introductionmentioning
confidence: 99%