2023
DOI: 10.1007/s12008-023-01199-7
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Design and performance analysis of a dual channel RF MEMS switch with separate bias voltage and signal paths for aerospace applications

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Cited by 4 publications
(2 citation statements)
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“…The output of the research validates that the switch can offer a pull-in voltage as low as 4.4 V for a beam thickness of 1 µm. The researchers in [133] presented an MEMS capacitive switch with silicon nitride dielectric involving a varying section fixed-fixed beam as show in Figure 9. The varying section of the clamped-clamped beam reduces the spring constant of the beam and offers low pull-in voltage.…”
Section: High Actuation Voltagementioning
confidence: 99%
“…The output of the research validates that the switch can offer a pull-in voltage as low as 4.4 V for a beam thickness of 1 µm. The researchers in [133] presented an MEMS capacitive switch with silicon nitride dielectric involving a varying section fixed-fixed beam as show in Figure 9. The varying section of the clamped-clamped beam reduces the spring constant of the beam and offers low pull-in voltage.…”
Section: High Actuation Voltagementioning
confidence: 99%
“…For example, RF MEMS switches can achieve fast switching and modulation of RF signals. Devakirubai et al [148] proposed a MEMS switch made of a variable cross-section stationary beam using silicon nitride (Si 3 N 4 ) as an insulating material, which reduces the spring constant and the suction voltage. The structure of this RF switch has no dielectric charging, and the suction-close voltage is greatly reduced, which is effectively applied to intelligent communication in aerospace.…”
Section: Artificial Intelligencementioning
confidence: 99%