Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Krishnamurthy, A.; Venkatarami Reddy, D.; Radhamma, E.; Jyothirmayee, B.; Sreenivasa Rao, D.; Agarwal, V.; Balaji, B.

doi:10.5829/ije.2023.36.12c.16

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2024

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Cited by 2 publications

(2 citation statements)

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“…It serves and gives the crucial building block in modern electronic systems, allowing for the control and amplification of electrical signals. MOSFETs are the basic foundation of modern digital integrated circuits (ICs) such as microprocessors and memory chips (1). They are used in various analog applications, including amplifiers, voltage regulators, and analog switches.…”

Section: Introductionmentioning

confidence: 99%

Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node

Howldar,

Balaji,

Srinivasa Rao

2024

IJE

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Section: Introductionmentioning

confidence: 99%

Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node

Howldar,

Balaji,

Srinivasa Rao

2024

IJE

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“…However, one of the large electronics which is widely utilized in the manufacturing of semicondcutor circut integraded circut as well as other electronic systems is the metal oxide semiconductor field effect transistor (MOSFET) (4). It is used as a switch off/on and to amplify digital and analog circuits.…”

mentioning

confidence: 99%

Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

Buttol,

Balaji

2024

IJE

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This study introduces a biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor (DM-DMG TFET) in 10 nanometer technology. To detect diverse bio molecules, the biosensor incorporates a nano gap cavity formed through gate overlap on the drain side. The variation in ambipolar current serves as the sensing parameter, influenced by altering the dielectric constants of immobilized bio molecules within the nano cavity. In this paper, the simulation results of biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor with different dielectric constants imposed in nano cavity. A comprehensive examination of the biosensor's performance is conducted, exploring various positions and filling factors of bio molecules within the nano cavity region. This analysis involves a thorough investigation into the device's performance, considering a range of parameters such as drain current, electric field distribution, variations in surface potential, configurations of energy bands, behaviors of carrier concentration, and the Ion/Ioff ratio. The simulations are done using the Silvaco TCAD Atlas tool.

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Design and Performance Analysis of 6H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in 10nm Technology

Cited by 2 publications

References 32 publications

Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node

Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node

Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

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