Design and Technological Optimization of Electrical Parameters of the Wideband Balanced Microwave Frequency Mixer Based on Resonant-Tunneling Diodes

Cherkasov, Kirill V.; Мешков, С. А.; Makeev, Mstislav; Шашурин, В. Д.

doi:10.1134/s1064226922060079

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…In this paper, the problem is solved using the example of resonant tunneling AlGaAs NHS [19][20][21][22]. The basic idea of developing a compact model is that a system of integral and differential equations of the verification basis, can be transformed into algebraic and transcendental ones by linearization and decomposition.…”

Section: Methodsmentioning

confidence: 99%

Architecture of composite multilayer semiconductor nanostructures

Vetrova,

Kuimov,

Meshkov

et al. 2023

E3S Web of Conf.

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Section: Methodsmentioning

confidence: 99%

Architecture of composite multilayer semiconductor nanostructures

Vetrova,

Kuimov,

Meshkov

et al. 2023

E3S Web of Conf.

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“…The attractiveness of resonant-tunneling diodes as a nonlinear element is primarily due to the possibility of targeted synthesis of their voltage–current characteristics (I-V curves) through optimal design implementation of the resonant-tunneling structure (RTS) to achieve the required level of converter signal parameters during the design stage [ 8 , 9 , 10 , 11 , 12 , 13 , 14 ]. Thanks to the variation in I-V curves, research on the development of a “universal” resonant-tunneling diode capable of functioning as both a generator and a detector depending on the bias voltage is considered promising.…”

Section: Introductionmentioning

confidence: 99%

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Vetrova,

Kuimov,

Sinyakin

et al. 2023

Sensors

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This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.

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