Canadian Conference on Electrical and Computer Engineering 2004 (IEEE Cat. No.04CH37513)
DOI: 10.1109/ccece.2004.1344958
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Design issues of direct conversion radio frequency receivers in SiGe technology

Abstract: This paper describes the design issues of direct conversion RF receivers for WLAN systems using SiGe technology. For direct conversion transceivers, SiGe BiCMOS technology offers a combination of enhanced RF performance with advanced silicon technology. Simulated performance parameters of an active direct down conversion mixer using SiGe BiCMOS MMIC technology are presented. The mixer functions at 5 GHz and draws only 10.2 mW from a 3 V supply. The overall conversion gain of the circuit is 8.5 dl3.

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