Design Low Voltage Current Mirror at 32nm Regime

Abstract

As the technology moving towards lower voltage for high stability and accurate performance. We design low voltage current mirror using IGFET, FDSOI, CNTFET.These transistor is moving towards low-voltage high-speed performance. Here in this paper, we have design low voltage current mirror for Accurate duplication of current. To obtain accurate duplication of current, we verify the performance of low voltage current mirror on FDSOI and CNTFET Transistor having the 32nm technology. The circuit is simulated with 32nm technology for FDSOI and CNTFET. They operate at lower power supply than IGFET. The simulation results show the improvement in knee voltage 1.7v and 1.3v for the current mirror. Keywords-Carbon nanotube field-effect transistor (CNTFET); Fully Depleted Silicon on Insulator (FDSOI);Insulated Gate filed effect transistor (IGFET).