Design of a Distributed Oscillator in 130 nm SOI MOS Technology

Abstract

In this paper, the design and the results of a Silicon-on-Insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage Cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm 2 . A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW . The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage.

A comparative study of different gain cells based microwave CMOS distributed oscillators

“…It is of interest to study the suitability of these gain cells for different types of applications. While data are available for these in published literature, it is difficult to do a fair comparison since the available data are for different processes, power levels, and geometries .…”

“…A Silicon‐on‐Insulator (SOI) 130‐nm CMOS n‐MOSFET cascode gain‐cell DO was reported in Ref. . This oscillator design achieved a 10 GHz oscillating frequency with 4.76 dBm power, and a phase noise of −113.77 dBc/Hz at a 2.5 V supply voltage.…”

“…Different gain cells have been suggested in literature for DAs and Oscillators (DOs) in different processes. However, there is no proper comparison between DOs using these different gain cells.…”

“…A number of gain cells have been suggested in literature to achieve different desirable characteristics of DAs or distributed oscillators (DOs). Commonly used gain cell are n‐MOSFET , and n‐MOSFETs cascode . We have also proposed n–p MOSFET gain cell earlier in Ref.…”