Design of broadband power amplifier based on continuous class-F mode with frequency parameterization

Liu, Gang; Mu, Fuqi; Qiu, Xin; Leng, Yongqing; Peng, Xuan

doi:10.1587/elex.16.20190038

Cited by 10 publications

(5 citation statements)

References 27 publications

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“…Table 1 compares the designed RFPA with a state-of-theart broadband RFPAs with Cree CGH40010F device and shows the proposed RFPA operates at the highest operating frequency with 1 GHz bandwidth compared to other RFPAs with comparable performances. The output power variation is small compared to published literature [10], [11], [14]. The DE is very good at this frequency band that varies from 55.9% to 65.3%, as normally the efficiency decreases with the rise of operating frequency for the Cree device.…”

Section: B Continuous Wave (Cw) Measurementmentioning

confidence: 58%

Design of Wideband Continuous Class-F Power Amplifier Using Low Pass Matching Technique and Harmonic Tuning Network

et al. 2022

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Many countries have allocated new frequency bands for fifth generation (5G) communication systems. In this paper, a wideband continuous class-F (CCF) radio frequency power amplifier (RFPA) is presented for the new 5G frequency band, from 3.3 GHz to 4.3 GHz using a 10 W Cree CGH40100F device. A unique wideband RFPA design approach for the output matching network (OMN) is also presented by applying a harmonic tuning network (HTN) for the harmonics and a low pass matching technique (LPMT) for the fundamental frequency. The RFPA is fabricated, and promising measurement results show a drain efficiency of 55.9% to 65.3% is achieved at an output power of 40 dBm (± 0.3 dBm) over a frequency range of 3.3 GHz to 4.3 GHz. A two-tone signal with a 10 MHz spacing was also applied to investigate the linearity of the RFPA.

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Section: B Continuous Wave (Cw) Measurementmentioning

confidence: 58%

Design of Wideband Continuous Class-F Power Amplifier Using Low Pass Matching Technique and Harmonic Tuning Network

et al. 2022

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“…The biasing resistors and inductors are shorted for the RF signal at the DC biasing point through the bypass capacitors, as shown in Figure 2(a). As an example, 4310LC wideband bias chokes are selected for the PA design to block RF signal at the biasing [14], [15]. The gate and drain biasing structure are the same except that sometimes a resistor is added to the gate to increase the stability.…”

Section: Literature Reviewmentioning

confidence: 99%

Analysis and design of the biasing network for 1 GHz bandwidth RF power amplifier

Sadeque

Yusoff

Roslee

et al. 2021

IJEECS

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The bandwidth of the wireless communication has increased due to the various applications of the wireless devices. A radio frequency power amplifier (RFPA) is one of the crucial components of the transceiver. So, to meet the requirement of the bandwidth, wideband RFPA is needed. The RFPA not only requires a wideband matching network but importantly the biasing network. For the next-generation communication system, a wideband biasing network is needed to operate in the wide GHz bandwidth range. In this paper, a wideband biasing network for the power amplifier is designed using a quarter-wave transmission line and a butterfly stub for the frequency band of 3.3 GHz to 4.3 GHz. Roger’s RO3006 is used as the substrate for the design of the biasing network. The designed network performed well in the required frequency range. The performances of the biasing network have shown 9 dB to 19 dB return loss, the radio frequency (RF) isolation has more than 35 dB, and 0 dB to 1.5 dB insertion loss. This wideband biasing network can be used for the next generation communication system.

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“…Recently the operation mode of continuous PAs based on waveform engineering technology has exhibited a very promising approach to realizing wideband high-efficiency PAs. Continuous class-F modes [9][10][11][12][13], and continuous inverse class-F modes [14][15][16][17][18][19] have been widely reported. However, due to its own characteristics, class-F or class-F -1 results in a large peak-to-peak voltage, which may exceed the maximum tolerable voltage of the device, and cause damage to the device.…”

Section: Introductionmentioning

confidence: 99%

Design of a broadband high-efficiency power amplifier based on continuous class-EF mode

Luo,

Zhang,

Xuan

et al. 2024

IEICE Electron. Express

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This paper proposes a methodology to design broadband highefficiency power amplifiers. A novel continuous mode is proposed through combination the continuous class-F mode and the traditional class-EF mode under certain conditions. Thus, the advantages of wide bandwidth and high efficiency can be integrated into one power amplifier, that is, the proposed continuous mode class-EF power amplifier mode. In order to verify the effectiveness of the proposed method, a broadband high-efficiency power amplifier operating at 1.5-3.0 GHz is designed and implemented based on the CGH40010F GaN transistor. Measurements indicate that the saturated output power is greater than 40.2 dBm, drain efficiency is between 63% and 70%, gain exceeds 10 dB, across the whole frequency range.

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Design of broadband power amplifier based on continuous class-F mode with frequency parameterization

Cited by 10 publications

References 27 publications

Design of Wideband Continuous Class-F Power Amplifier Using Low Pass Matching Technique and Harmonic Tuning Network

Design of Wideband Continuous Class-F Power Amplifier Using Low Pass Matching Technique and Harmonic Tuning Network

Analysis and design of the biasing network for 1 GHz bandwidth RF power amplifier

Design of a broadband high-efficiency power amplifier based on continuous class-EF mode

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