Design of Look up Table for Emerging Non Volatile Memories in FRAM

Abstract

Non Volatile Memories (NVMs) can be used to implement the RAM cell in the lookup table. Here we proposed the four blocks non volatile single stage sense amplifier with voltage clamp is employed to reduce the power and area. One Transistor One Capacitor (1T1C) cell provides sufficient sense margin as a configuration bit and a Capacitor. Matched reference path is proposed to reduce the parasitic mismatch for reliable sensing. Tree multiplexer can be used non volatile memories in lookup table.Index terms: non volatile memory, ferromagnetic memory, matched reference path.