2024
DOI: 10.1088/1361-6641/ad5b15
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Design strategies and systematic analysis of GaN vertical MPS diodes with T-shaped shielding rings

Heng Wang,
Sihao Chen,
Hang Chen
et al.

Abstract: We report gallium nitride (GaN) vertical merged pn-Schottky (MPS) diodes with T-shaped p-GaN shielding rings (SRs). The embedded T-shaped SR features an overlapped depletion region by the lateral and vertical p n junctions under reverse bias condition, which can effectively enhance the charge coupling effect and homogenize the 2-D electric field distribution. In the meantime, the incorporation of the T-shaped SRs can minimize unnecessary depletion of the vertical conduction channel and guarantee a decent curre… Show more

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