Destructive Single-Event Effects Testing of the Intersil ISL70023SEH and ISL70024SEH Gallium Nitride power transistors

Vonno, N. W. van; Mansilla, O.; Gill, Jagbir; Newman, W. H.; Pearce, L. G.; Thomson, E. J.

doi:10.1109/nsrec.2017.8115470

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Destructive Single-Event Effects Testing of the Intersil ISL70023SEH and ISL70024SEH Gallium Nitride power transistors

Cited by 2 publications

References 0 publications

Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor

Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor

Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor

Contact Info

Product

Resources

About