2019
DOI: 10.3390/en12234547
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Detection of Typical Defects in Silicon Photovoltaic Modules and Application for Plants with Distributed MPPT Configuration

Abstract: During their operational life, photovoltaic (PV) modules may exhibit various defects for poor sorting of electrical performance during manufacturing, mishandling during transportation and installation, and severe thermo-mechanical stresses. Electroluminescence testing and infrared thermographic imaging are the most common tests for checking these defects, but they are only economically viable for large PV plants. The defects are also manifested as abnormal electrical properties of the affected PV modules. For … Show more

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Cited by 24 publications
(9 citation statements)
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“…Specifically, the inclusion of δ I and F S improved the accuracy of the 1D CNNs by 30.9% and reduced the associated standard deviation by 26.6% compared to the 1D CNN with only the I CS and I F S parameters ( Table 3). The F S was constructed to capture changes in slope values near the I sc (an important diagnostic tool [8]) while the δ I was constructed based on knowledge of mismatch profiles in IV curves. These results show that calculating parameters based on domain knowledge allows for more stable and accurate results.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Specifically, the inclusion of δ I and F S improved the accuracy of the 1D CNNs by 30.9% and reduced the associated standard deviation by 26.6% compared to the 1D CNN with only the I CS and I F S parameters ( Table 3). The F S was constructed to capture changes in slope values near the I sc (an important diagnostic tool [8]) while the δ I was constructed based on knowledge of mismatch profiles in IV curves. These results show that calculating parameters based on domain knowledge allows for more stable and accurate results.…”
Section: Resultsmentioning
confidence: 99%
“…After processing the data, additional parameters were calculated to explicitly capture the mismatch of profiles between the CS and FS IV curves and through associated first order differences (i.e., between consecutive observations) ( Table 2). For example, the F S parameter, which evaluates consecutive, pairwise differences in I F S , was inspired by a calculation of shunt resistance R sh , an important diagnostic feature [8].…”
Section: B Data Filtering and Processingmentioning
confidence: 99%
“…Reversible up to 85% loss [74] PID-s Degradation < 40%: Increase R s , R sh and FF decreases, I sc and V oc not significantly affected. [73,74] Degradation > 40%: Increase R s , R sh and FF decreases, I sc and V o c drop significantly [73,74] Normally up to 30% [74] 50% power lossunder front side illumination 68% power lossunder rear side illumination [74] Indoors: Increase module's temperature [74,79] Reverse bias the cell compared to the grounded frame [74] Increasing refractive index of anti-reflective coat [83] Use of Borosilicate glass or POE or TPO encapsulants [64] PID-p Drop I sc and V oc but very low effect on FF. [79] Table 4.…”
Section: Discussionmentioning
confidence: 99%
“…The presence of micro fissures on the cells can cause a reduction of the short circuit current and shunt resistance. When the cracking of the cells is not uniform throughout the module, the I-V curve is commonly stepped [73]. Strategies to overcome and reduce the occurrence of microcracks on the solar cell have been studied at the cell, module, and system levels.…”
Section: Microcracksmentioning
confidence: 99%
“…For each cell, an average (spatial) temperature was calculated in order to evaluate the electrical efficiency by using the Shockley one-diode model, in which it depends on the solar irradiance G and the ambient temperature T a . The current I and the voltage V are related by the following equation [28]:…”
Section: The Pvfc Module: Structural Thermal and Electrical Modelmentioning
confidence: 99%