Detector production for the R3B Si-tracker

Borri, M.; Lemmon, R. C.; Thornhill, J.; Bate, R.; Chartier, M.; Clague, Nick; Herzberg, R.‐D.; Labiche, M.; Lindsay, S. W.; Nolan, P.; Pearce, F.; Powell, William; Wells, David

doi:10.1016/j.nima.2016.08.050

Cited by 5 publications

(9 citation statements)

References 2 publications

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“…Located closest to the target region, the R3B Silicon Tracker consists of three layers: one inner layer and two identical outer layers. These three layers are made of 30 DSSSDs (Double Sided Silicon Strip Detectors): 6 in the inner layer and 12 in each outer layer [1].…”

Section: Introductionmentioning

confidence: 99%

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Chatterjee,

Srivastava

2024

J. Inst.

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Radiation hard Double Sided Silicon Strip Detectors are used at the Silicon Tracker for the detection of two-dimensional position andenergy measurement of the incident protons in the R3B experiment at FAIR. Double Sided Silicon Strip Detectors were fabricated by Micron Semiconductor Ltd., U.K. and the first set of experimental measurements havebeenperformed on the non-irradiated detectors in order to understand the macroscopic performance of the detectors for the tracker. This study is extended to the performance of the irradiated detectors in the proton radiation environmentusing proton radiation damage model. The detectors were irradiated with 23 MeV protons up to an expected fluence of 8 × 1014 neq cm-2, which is one order higher than expected fluence at an initial phase0 of the experiment. The performance characteristics of the detectors on the full depletion voltage, leakage current, and charge collection efficiency were extrapolated using SRH and CCE modelling, which is usually implemented in device TCAD. The results on the detectors were compared with the available experimental data on the detectors. A very good comparison between experimental data and calculated resulthave been recorded for non-irradiated and irradiated detectors. The agenda is to propose a proton radiation hard Double Sided Silicon Strip Detector design on the basis of the present study for the phase 1 upgrade of the experiment.

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Section: Introductionmentioning

confidence: 99%

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Chatterjee,

Srivastava

2024

J. Inst.

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“…FAIR (Facility for Antiproton and Ion Research) is an accelerator facility at GSI, Darmstadt, Germany [1][2]. FAIR can deliver ion beams of all elements up to Uranium.…”

Section: Introductionmentioning

confidence: 99%

“…In the R3B experimental setup, the silicon tracker is positioned closest to the target region within a vacuum vessel [7]. When the Ion beams willpass through the three layers of the silicon tracker, it can provide high-resolution position measurement of light charged particles like protons [1]. The three layers of the silicon tracker are constructed with a total of 30 Si double-sided strip detectors (DSSD), 6 Si DSSD are required for the inner layer and 12 Si DSSD are required for eachouter layerof the Si tracker as shown in figure 1 [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Study of the Proton Irradiation Effects in n-FZ DSSD for the Si Tracker at R3B Experiment

Chatterjee

Saini

Patyal

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The R3B collaboration aims to assemble an experimental setup with high resolution and efficiency to perform kinematically complete measurements of reactions with high-energy RIBs (radioactive ion beams). In the R3B experimental setup, the silicon tracker is positioned closest to the target region and can provide high-resolution position measurements of light-charged particles like protons. The three layers of the silicon tracker are constructed with a total of 30 Si double-sidedstrip detectors (DSSD). In this paper, as an option of 23 MeV proton irradiated n-type Float-Zone(Fz)Si double-sidedstrip detector (DSSD) havebeen considered, and by taking the two-trapproton irradiation damage model, the bulk damage effect and the macroscopic performance of the Sidouble-sidedstrip detector (DSSD) have been discussed. The detector is irradiated with three values of proton fluences (equivalent to 1Mev neutron fluence): 2×1014,5×1014 and 8×1014 cm-2. By using the Shockley-Read-Hall recombination (SRH) formulation, the full depletion voltage and leakage current have been measured as a function of the irradiation dose, finally the device and process parameters and specifications for the Si double-sidedstrip detector (DSSD) used in the R3B silicon tracker experimenthavebeen proposed.

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“…Gamma-rays from the decay of excited nuclei and light-charged particles at large angles are detected by CALIFA (CALorimeter for In-Flight detection of gamma-rays and high energy charged pArticles) [6], which surrounds the target. A silicon strip vertex detector is placed inside CALIFA to measure light charged-particle tracks close to the target [7]. An overview of the R 3 B setup during the phase 0 experimental campaign [8,9] at GSI is presented in Fig.…”

Section: Introductionmentioning

confidence: 99%

Investigation of background reduction techniques for the NeuLAND neutron detector

Douma

Boretzky

Gašparić

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Detector production for the R3B Si-tracker

Cited by 5 publications

References 2 publications

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Study of the Proton Irradiation Effects in n-FZ DSSD for the Si Tracker at R3B Experiment

Investigation of background reduction techniques for the NeuLAND neutron detector

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