Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Abstract

Abstract. Capacitance-voltage ( C-V ) and conductance-frequency () techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high for Al-HfO 2 -Si, Pt-Gd 2 O 3 -Si and Pt-LaLuO 3 -Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd<inf>2</inf>O<inf>3</inf> as gate dielectric

“…This degradation is not observed in the MOS-diodes. From the capacitance measurements, the dielectric constant of the Gd 2 O 3 layer is calculated to be in the 11-13 range, similar to the previously reported results [13]. Interestingly, no significant change is found in the capacitance in accumulation region during the thermal processes, which suggests that no damage is caused to the dielectric layer during the thermal treatment.…”

Current transport mechanisms in metal – high-k dielectric – silicon structures

“…The values of activation energies E a derived from the temperature dependences of lowfrequency a.c. currents are presented in Table. The lowest value of the activation energy E a was found for the Gd 2 O 3 film grown on the Si(100) substrate (sample #2). This sample also shows the lowest density of interface states [25]. Taking into account that the applied forward bias during the measurement of temperature dependences is low (V g = V 1 .…”

Investigation of the Density of State Probability for Fe Metal Contact to Tio2 Semiconductor System

“…Then Eq. ( 9) reduced to constitute the basis: ……………… (10) This activation energy of system is connected to the reorientation energy of electron transfer and the standard driving energy of the electron transfer reaction processes due to the relation [20]:…”

“…Interfaces formation on the basis of Metal/Semiconductor contact in 2009 [9], gave basic features of many metal /semiconductor devices. The importance of the investigation of the interface's states formation is included in the fact that the fewer densities of the interface states require to provide an appropriate ET in devices and to guarantee control of the potential [10]. An electron transfer simulation was achieved at an electronic nanodevices system.…”