Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

Lin, Yow−Jon; Zeng, Jian-Jhou

doi:10.1016/j.apsusc.2014.10.062

Cited by 17 publications

(4 citation statements)

References 36 publications

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“…(Schottky-Mott relation) in the range -0.45 0.55 eV for undoped graphene. The Fermi level unpinning enables easy modulation of the Schottky barrier, a feature that can be exploited to tune Gr/Si devices to match specific performance requests [11,56]. Deviations from the Schottky-Mott prediction are mainly due to image force lowering [57] or hot electrons barrier lowering [58,59].…”

Section: Evmentioning

confidence: 99%

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on ntype Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. 2These features render the device a photodetector with responsivity (3 / for white LED light at 3 2 ⁄ intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution.This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

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Section: Evmentioning

confidence: 99%

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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“…The peaks of Si 2 p are assigned to the Si–S bond (102.4 eV) and Li 2 S‐SiS 2 analogue (e.g., 0.6Li 2 S‐0.4SiS 2 at 101 eV and 0.3Li 2 S‐0.7SiS 2 at 101.7 eV). [ 33 ] The slight oxide peak at 103.7 eV may be induced by oxidation during sample preparation/transferring. [ 34 ] After 1200 cycles, the major phase (Figure 5b) remains PS 4 3− in the P 2 p and S 2 p spectra, with only minor impurities at the Li|SE interface including slight P 2 S 7 4− and P 2 O 5 in P 2 p , [ 35 ] and Li 2 S n and Li 2 S in S 2 p .…”

Section: Resultsmentioning

confidence: 99%

Metastable Decomposition Realizing Dendrite‐Free Solid‐State Li Metal Batteries

Song

Yao

et al. 2023

Advanced Energy Materials

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promising applications in energy storage devices meet the multiplying demands regarding high energy densities and safety concerns. [1] As a key part of ASSLBs, the SEs possess merits including decent thermal properties, mechanical strengths, and electrochemical stability windows; high Li transference numbers; and stable ion transports. [2] Among diverse SEs, sulfides show high ionic conductivity comparable to the commercial liquid electrolytes at room temperature, and good deformability favorable for battery assembling, [3] which are prime candidates for practical applications. [4] Nonetheless, sulfide SEs are electrochemically incompatible with metallic Li, which generates electronic conductive interphases. [5] This not only promotes the interfacial reaction of Li/sulfide causing a large interface resistance but also accelerates the Li-dendrites growth, leading to a rapid deterioration of battery performance and finally short circuits. [6] Despite the progress achieved, how to suppress Li dendrites in SEs to date is still a major issue to hinder the practical applications of lithium metal anode. Yet, no significant breakthrough has been achieved. ASSLBs using sulfide SEs and Li metal anode can only work for a few hundred cycles (<300 cycles) at room temperature, even at relatively small current densities (<0.3 mA cm −2 ), while the long-life batteries always use Li composite anodes such as Li-In, [7] Li-C, [8] and Ag-C. [4a] However, considering the high theoretical capacity (3860 mAh/g) and low electrochemical potential (−3.04 V vs SHE), Li metal remains the ultimate choice for Li batteries. [9] Moreover, a Li metal anode is important for developing next-generation Li-S batteries, [10] along with the sulfide SEs to restrain the polysulfide dissolution. It is thus significant to improve the electrochemical stability of sulfide SEs to Li. Many efforts based on external routes have been made so far to successfully mitigate the reactivity of Li/sulfide-SEs, including Li alloying (e.g., In-Li), surface decorations, construction of artificial interfaces, and incorporation of organic/ionic-liquid buffer layers. [6a,11] Combined with these external routes, if the sulfides themselves can be optimized via the intrinsic routes, for example, doping, phase transition, and microstructural modification, the interfacial stability of Li/sulfide is expected to be effectively enhanced.Compared with other sulfide-based SEs, Li-argyrodites Li 7-a PS 6-a X a (X = Cl, Br, I) as an important family member of sulfide-based SEs not only possess a low cost and high ionic A stable interface and preventing dendrite-growth are two crucial factors to realize long-life all-solid-state Li batteries (ASSLBs) using sulfide-based solid electrolytes (SEs) and Li metal anodes. But it remains a challenge to accomplish the two factors simultaneously. Here, an effective strategy is reported to realize this goal in Li-argyrodites via self-engineered metastable decomposition that is enabled by Si doping in Cl-rich argyrodites. It is shown that Cl...

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“…From the lower shifts, it is analyzed that there is an electronic interaction at the interface of MNPs and MxPh-TNs. This indicates generation of the Schottky barrier at the interface, which may result from electron transmission from MxPh-TNs to MNPs (Pt and Pd–Pt) . The interaction leads to modification in the interface, which gives rise to symmetric barriers intended for charge transport, which play a vital role in the switching behavior of hybrid structures.…”

Section: Resultsmentioning

confidence: 99%

Mixed-Phase TiO₂ Nanotube–Nanorod Hybrid Arrays for Memory-Based Resistive Switching Devices

Bamola

Singh

Bhoumik

et al. 2020

ACS Appl. Nano Mater.

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Metal oxide nanostructure hybrid materials have garnered focused attention for next-generation memory-based devices. TiO 2 nanostructure hybrids dwell in that league of materials. In reference to that, the present work reports the growth of mixed-phase TiO 2 nanostructures (MxPh-TNs) and their hybrids by grafting metal nanoparticles (MNPs). MxPh-TNs are a concoction of rutile nanorods and anatase nanotubes, imaged using field-emission scanning electron microscope and further confirmed by micro-Raman spectroscopy. During the growth of MxPh-TNs, a rutile and anatase mixed-phase interface is formed, as confirmed by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Furthermore, by grafting MNPs of platinum (Pt) and palladium−platinum (Pd−Pt) over MxPh-TNs, a top interface is investigated in order to have modifications in their structure and electronic interaction. Thus, dual interfaces corresponding to a mixed phase (rutile and anatase) and MNPs/TNs result in the modification of formed nanostructures and their hybrids (MX-TNHs), as confirmed by X-ray photoelectron spectroscopy and Kelvin probe force microscopy (KPFM) studies. Modification at the interface results in improved crystallinity and symmetric barriers for charge transport in hybrid structures. MxPh-TNs and MX-TNHs are further explored for device applications in the form of memristive resistive switching devices. It is observed that the device performances of Pt/MX-TNHs and Pd−Pt/MX-TNHs are better than that of MxPh-TNs in terms of the memory window (I ON /I OFF ratio). The improved device performance in the hybrid structures are due to the enhanced charge separation and defects at the interface of MNPs (Pt and Pd−Pt) and MxPh-TNs.

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Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

Cited by 17 publications

References 36 publications

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Metastable Decomposition Realizing Dendrite‐Free Solid‐State Li Metal Batteries

Mixed-Phase TiO₂ Nanotube–Nanorod Hybrid Arrays for Memory-Based Resistive Switching Devices

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Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

Cited by 17 publications

References 36 publications

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Metastable Decomposition Realizing Dendrite‐Free Solid‐State Li Metal Batteries

Mixed-Phase TiO2 Nanotube–Nanorod Hybrid Arrays for Memory-Based Resistive Switching Devices

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Product

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About

Mixed-Phase TiO₂ Nanotube–Nanorod Hybrid Arrays for Memory-Based Resistive Switching Devices