Determination of the dominant diffusing species during nickel and palladium germanide formation

Comrie, C.M.; Smeets, Dries; Pondo, KJ; Walt, C. van der; Demeulemeester, Jelle; Knaepen, Werner; Detavernier, Christophe; Habanyama, A.; Vantomme, André

doi:10.1016/j.tsf.2012.10.113

Cited by 20 publications

(17 citation statements)

References 29 publications

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“…These phases are generally reported to form sequentially [7,9]. Our results [10,11] for the phase-formation sequences, formation temperatures, and dominant diffusing species (DDS) during reactive diffusion in the Ni/Ge and Pd/Ge systems, obtained using in-situ (real-time) Rutherford Backscattering Spectrometry (RBS) and particle induced X-ray emission (PIXE) are summarized in Table 1.…”

Section: Phase-formation Sequencesmentioning

confidence: 91%

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Habanyama¹

2018

Advanced Material and Device Applications With Germanium

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We examine the reported interface-based processes used in the modulation of Schottky barrier heights at the nickel germanide/n-type germanium and palladium germanide/ntype germanium junctions. Various sample preparation and characterization methods are discussed. Stable Ni/Ge and Pd/Ge structural phases are identified, and their temperature range of stability is established. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics are analyzed to study the effect of various interface control processes. Sheet resistivity and its stability over various annealing temperature ranges are analyzed. The fundamental mechanisms at play in order to achieve ohmic characteristics are observed and analyzed using various interface control processes. Some interfacial and structural factors that pin the Fermi level are analyzed in relation to experimental results. The different interfacial control processes are analyzed, and their effectiveness is compared. Recommendations are made for the improvement of Ni and Pd contacts in the next generation of n-type germanium-based nanoelectronic devices.

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Section: Phase-formation Sequencesmentioning

confidence: 91%

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Habanyama¹

2018

Advanced Material and Device Applications With Germanium

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“…A plot of NiGe formed above the marker against the total amount of NiGe formed. Predicted plots for 100% Ni and 100% Ge diffusion are also included as a dashed and dotted line respectively [35].…”

Section: Lateral Diffusion Couplesmentioning

confidence: 99%

“…Schematic diagram showing the sample configuration used to determine the dominant diffusing species during NiGe formation. Upon heating, Ni first reacts with the Ge deposited on top of the marker and then the remaining Ni, after all the Ge on top of the marker has been consumed, diffuses past the marker[35].…”

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confidence: 99%

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Inter-Diffusion of Nickel and Palladium with Germanium

Habanyama¹,

Comrie²

2018

Intermetallic Compounds - Formation and Applications

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Nickel and palladium germanides are the most promising candidates for nano-electronic contact materials to active areas of germanium-based devices. Solid-state reactions were thermally induced in conventional thin film couples of the Ni/Ge and Pd/Ge systems in order to study the sequence of phase formation. By embedding a thin layer of tantalum or tungsten as an inert marker between coupling thin film layers and observing its movement during phase formation, the dominant diffusing species were identified and monitored. In the Ni/Ge system, Ni 5 Ge 3 was the first phase to form followed by NiGe. The results showed that during Ni 5 Ge 3 formation, Ni was the sole diffusing species. During NiGe formation, both Ni and Ge diffused with the Ge diffusion prominent during the early stages, while the later stage of growth was dominated by Ni diffusion. The only phases observed to form in the Pd/Ge system were PdGe and Pd 2 Ge, the latter being the first. Palladium was the dominant diffusing species during both phase formations. Lateral diffusion couples were also prepared by the deposition of thick rectangular islands of germanium on to thin films of nickel and palladium. Several aspects of thermally induced lateral (as opposed to vertical) growth of phases were studied.

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“…6 Both Ta and W diffuse more slowly than Ge and Ni, hence their use as markers for studying the reactive diffusion in Ni/Ge was reported in previous studies. 21 Such slow-diffusing species tend to segregate at interfaces as well as at grain boundaries and can thereby inhibit the agglomeration. 22 Apart from this, the formation of ternary phases or alloys with Ni and Ge is unlikely with both Ta and W. For Ta, a rise in agglomeration temperature by 50 °C was reported when co-depositing Ni and Ta on Ge.…”

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confidence: 99%

Improving the morphological stability of nickel germanide by tantalum and tungsten additions

Jablonka

Kubart

Gustavsson

et al. 2018

Applied Physics Letters

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To enhance the morphological stability of NiGe, a material of interest as a source drain-contact in Ge-based field effect transistors, Ta or W, is added as either an interlayer or a capping layer. The efficacy of this Ta or W addition is evaluated with pure NiGe as a reference. While interlayers increase the NiGe formation temperature, capping layers do not retard the NiGe formation. Regardless of the initial position of Ta or W, the morphological stability of NiGe against agglomeration can be improved by up to 100 °C. The improved thermal stability can be ascribed to an inhibited surface diffusion, owing to Ta or W being located on top of NiGe after annealing, as confirmed by means of transmission electron microscopy, Rutherford backscattering spectrometry, and atom probe tomography. The latter also shows a 0.3 at. % solubility of Ta in NiGe at 450 °C, while no such incorporation of W is detectable.

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Determination of the dominant diffusing species during nickel and palladium germanide formation

Cited by 20 publications

References 29 publications

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Inter-Diffusion of Nickel and Palladium with Germanium

Improving the morphological stability of nickel germanide by tantalum and tungsten additions

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