Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in accumulation mode

Hu, Chengqing; Kencke, D.L.; Banerjee, Sanjay K.; Bandyopadhyay, B.; Ibok, E.; Garg, S.

doi:10.1063/1.113877

Cited by 12 publications

(8 citation statements)

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“…Based on above analysis, we verified that the measured STO capacitor has an effective oxide thickness of less than 11.0 Å. If we subtract the known 2-3 Å for charge quantum confinement effect at the oxide/Si interface, 27 we can estimate that the 110 Å SrTiO 3 behaves comparably to an 8 Å SiO 2 gate insulator. The interface trap density was estimated using a method proposed by Terman.…”

Section: Resultsmentioning

confidence: 91%

Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Ramdani

Curless

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thin film perovskite-type oxide SrTiO3 has been grown epitaxially on Si(001) substrate by molecular beam epitaxy. Reflection high energy electron diffraction and x-ray diffraction analysis indicate high quality SrTiO3 heteroepitaxy on Si substrate with SrTiO3(001)//Si(001) and SrTiO3[010]//Si[110]. The SrTiO3 surface is atomically as smooth as the starting substrate surface, with a root mean square roughness of 1.2 Å observed by atomic force microscopy. The thickness of the amorphous interfacial layer between SrTiO3 and Si has been engineered to minimize the device short channel effect. An effective oxide thickness <10 Å has been obtained for a 110 Å thick dielectric film. The interface state density between SrTiO3 and Si is 6.4×1010 cm−2 eV−1, and the inversion layer carrier mobilities are 221 and 62 cm2 V−1 s−1 for n- and p-channel metal–oxide–semiconductor devices with 1.2 μm effective channel length, respectively. The gate leakage in these devices is two orders of magnitude smaller than a comparable SiO2 gate dielectric metal–oxide–semiconductor field effect transistors.

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Section: Resultsmentioning

confidence: 91%

Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Ramdani

Curless

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It is also worth mentioning the analytical solution of the elastic problem for a misfitted parallelepiped in a semispace. 22 An infinitely long parallelepiped is identical to an isolated wire but, as we will show below, an assumption of an isolated wire instead of a periodic array of wires introduces a significant error and, again, only stress components were evaluated in Ref. 22.…”

Section: Introductionmentioning

confidence: 99%

Strain in buried quantum wires: Analytical calculations and x-ray diffraction study

et al. 2002

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The displacement field in and around periodically arranged quantum wires embedded in a crystalline matrix is calculated analytically for an arbitrary finite thickness of the cover layer. A good agreement is obtained between measured x-ray-diffraction peaks of a wire structure and kinematical calculations with the displacement field derived in the paper. The strain and quantum size effects on the photoluminescence line shift are found to be comparable, due to small width ͑35 nm͒ of the wires.

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“…Due to the influence of quantum confinement effect at interface, 2-3Å should be subtracted. [8] Thus, the 150Å SrTiO 3 behaves comparably to a SiO 2 gate insulator with thickness of 16Å. The interface trap density was estimated using a method proposed by Terman [9].…”

Section: Resultsmentioning

confidence: 99%

Influence of Processing Conditions on the Structure of Strontium Titanate Thin Films Grown on Si by Laser Mbe

Zhou

Miao

et al. 2006

Integrated Ferroelectrics

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Epitaxial SrTiO 3 thin films have been deposited on Si (100) substrates by laser molecularbeam epitaxy. The experiments have confirmed that the use of Sr buffer layer is essential for making high quality SrTiO 3 film. Apart from this, processing parameters including the deposition temperature and time for each layer also have significant influence on the crystallinity and roughness of SrTiO 3 . The thin films prepared under optimized conditions were found to have a pure perovskite phase, well crystallized and epitaxially aligned. The electrical measurements indicate that the SrTiO 3 film has a capacitance effective thickness of less than 16Å.

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Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in accumulation mode

Cited by 12 publications

References 0 publications

Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Strain in buried quantum wires: Analytical calculations and x-ray diffraction study

Influence of Processing Conditions on the Structure of Strontium Titanate Thin Films Grown on Si by Laser Mbe

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