Development of CMOS-Compatible Integrated Silicon Photonics Devices

Izhaky, Nahum; Morse, Mike; Koehl, S.; Cohen, Oded; Rubin, Doron; Barkai, Assia; Sarid, G.; Cohen, Rami; Paniccia, Mario

doi:10.1109/jstqe.2006.884089

Cited by 119 publications

(52 citation statements)

References 26 publications

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“…[1][2][3][4][5] Due to its indirect band gap, interband recombination in crystalline Si requires the participation of phonons to conserve crystal momentum. This leads to a very low internal quantum efficiency and Si is, therefore, rarely used as active light-emitting material.…”

Section: Introductionmentioning

confidence: 99%

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

et al. 2011

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We present a comparative microphotoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The cavity-mode intensity is investigated for L3 and hexapole cavities with a range of different mode quality factors. For each type of cavity, many nominally identical samples are probed to obtain reliable statistics. As the cavity-mode quality factor increases, we observe a clear reduction of the average mode emission intensity under conditions of strong optical pumping. This clear trend is compared with simulations based on a dissipative master-equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain direct evidence that reabsorption of photons in the cavity is responsible for the observed trend. When combined with the observation of cavity linewidth broadening in power-dependent measurements, we conclude that free carrier absorption limits the cavity-mediated light enhancement under conditions of strong excitation.

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Section: Introductionmentioning

confidence: 99%

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

et al. 2011

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“…Recently, waveguide-based solutions have been put forward in order to reduce the size and cost of components, as well as increasing robustness. [14][15][16][17] If the optical signal is confined to a waveguide, its evanescent field can interact with the surrounding medium and can therefore be used to extract the sensing a Author to whom correspondence should be addressed: lena.simone.fohrmann@tuhh.de. information.…”

Section: Introductionmentioning

confidence: 99%

Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

Fohrmann¹,

Sommer²,

Pitruzzello³

et al. 2017

APL Photonics

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Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC) mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

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“…An industry leader, Intel Corporation, forsees a cost-driven transition to optical interconnects in computers that could 'revolutionize future servers and enterprise networks' [6,8,9,10]. Intel chose to invest in silicon photonics because they felt OEICs could alleviate electronic bottlenecks, enabling ultrafast processing in a new generation of chips-and-computers-a generation more capable and cost effective than ever before.…”

Section: The Present Status Of Oeicsmentioning

confidence: 99%

Introduction: The Opto‐Electronic Integrated Circuit

Soref

2008

Silicon Photonics

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Development of CMOS-Compatible Integrated Silicon Photonics Devices

Cited by 119 publications

References 26 publications

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

Introduction: The Opto‐Electronic Integrated Circuit

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