Development of silicon nanowires based on Ag-Au metal alloy seed system for sensing technologies

Gebavi, Hrvoje; Ristić, Davor; Baran, Nikola; Marciuš, Marijan; Gašparić, Vlatko; Syed, Kamran; Ivanda, Mile

doi:10.1016/j.sna.2021.112931

Cited by 4 publications

(8 citation statements)

References 40 publications

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“…(a) High-density trunk nanostructure growth High-density trunk nanostructure growth is obtained by Ag-Au plating before VLS. This topic is already described in our previous work [21] in more detail. In short, wafer plating with Ag before Au increases the number of metal droplets more than 2 times which consequently gives a higher number of SiNWs, i.e., trunks for SiNTrs.…”

Section: Silicon Nanotree Synthesismentioning

confidence: 82%

“…One of the beneficial parameters for high SERS enhancement is high trunk density and elasticity. In this work, we used achievements from the previous research, [21] i.e., the silicon wafers were plated with Ag-Au to increase the number of trunks per unit area by over two times and reduce their thickness.…”

Section: Discussion On Ntr Nanostructure and Sersmentioning

confidence: 99%

“…The most common method for silicon nanotrees (SiNTr) growth is the vapor-liquidsolid (VLS) method [17][18][19][20][21]. Generally, the NTr growth includes the main trunk growth and, subsequently, the branches.…”

Section: Introductionmentioning

confidence: 99%

“…(a) Trunk thickness and height are mainly influenced by temperature, gas pressure and deposition time. Their number per unit area can be increased by additional Ag coating before the traditional Au seed layer [21]. (b) In ref.…”

Section: Introductionmentioning

confidence: 99%

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Engineering SERS Properties of Silicon Nanotrees at the Nanoscale

et al. 2022

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Large specific surface area nanostructures are desirable in a wide range of sensing applications due to their longer light-trapping path and increased absorption. Engineering of the specific nanotree structure which possesses a high branch density turned out to be challenging from the experimental point of view, and certainly not adequately explored. This paper shows how to design substrates with a silicon nanotree structure for surface-enhanced Raman spectroscopy (SERS) applications. Silicon nanotrees were synthesized by a Ag-Au nanocluster-catalyzed low-pressure chemical vapor deposition method (LPCVD). By the presented approaches, it is possible to manipulate branches’ number, length and thickness. The synthesized nanostructures are flexible after immersion in water which improves SERS performance. The amount of sputtered metal played a key role in preserving the flexibility of the nanotree structure. The obtained substrates with highly fractal nanostructure were tested on 4-mercaptophenylboronic acid (MPBA) to match the optimal SERS parameters. The silicon nanotrees fabrication, and particularly obtained SERS substrates plated with Ag and Au nanoparticles, demonstrated good features and a promising approach for further sensor development.

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Section: Silicon Nanotree Synthesismentioning

confidence: 82%

Section: Discussion On Ntr Nanostructure and Sersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Engineering SERS Properties of Silicon Nanotrees at the Nanoscale

et al. 2022

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“…Over the past 30 years, there has been a plethora of methods employed to manufacture Si NRs including laser ablation, evaporation of silicon monoxide, molecular beam epitaxy, metal-assisted chemical etching, laser-induced etching, and many more. − However, the majority of these methods have similar drawbacks including low size tunability, extreme reaction conditions, and/or the necessity of metal seeds (Au, Ag, Sn, Al, and Ni), usually in the form nanocrystals, as promoters for NR growth ,,− (Table S1). Additionally, the majority of the nanowires/nanorods produced have diameters too large to exhibit any confinement affects.…”

Section: Introductionmentioning

confidence: 99%

Sn-Induced Synthesis of Highly Crystalline and Size-Confined Si Nanorods at Moderately High Temperatures Using Hydrogen Silsesquioxane

Spence,

Barbieri,

Pate

et al. 2023

J. Phys. Chem. C

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Size-confined Si nanorods (NRs) have gained notable interest because of their tunable photophysical properties that make them attractive for optoelectronic, charge storage, and sensor technologies. However, established routes for fabrication of Si NRs use well-defined substrates and/or nanoscopic seeds as promoters that cannot be easily removed, hindering the investigation of their true potential and physical properties. Herein, we report a facile, one-step route for the fabrication of Si NRs via thermal disproportionation of hydrogen silsesquioxane (HSQ) in the presence of a molecular tin precursor (SnCl4) at a substantially lower temperature (450 °C) compared to those used in the synthesis of size-confined Si nanocrystals (>1000 °C). The use of these precursors allows the facile isolation of phase-pure Si NRs via HF etching and subsequent surface passivation with 1-dodecene via hydrosilylation. The diameters (7.7–16.5 nm) of the NRs can be controlled by varying the amount of SnCl4 (0.2–3.0%) introduced during the HSQ synthesis. Physical characterization of the NRs suggests that the diamond cubic structure is not affected by SnCl4, HF etching, and hydrosilylation. Surface analysis of NRs indicates the presence of Si0 and Sin+ species, which can be attributed to core Si and surface Si species bonded to dodecane ligands, respectively, and a systematic variation of the Si0:Si–C ratio with the NR diameter. The NRs show strong size confinement effects with solid-state absorption onsets (2.51–2.80 eV) and solution-state (Tauc) indirect energy gaps (2.54–2.70 eV) that can be tuned by varying the diameter (16.5–7.7 nm). Photoluminescence (PL) and time-resolved PL (TRPL) studies reveal size-dependent emission (1.95–2.20 eV) with short, nanosecond lifetimes across the visible spectrum, which trend closely with absorption trends seen in solid-state absorption data. The facile synthesis developed for size-confined Si NRs with high crystallinity and tunable optical properties will promote their application in optoelectronic, charge storage, and sensing studies.

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