Development of small silicon modulators in silicon-on-insulator (SOI)

Png, Ching Eng; Reed, Graham T.; Atta, Ragheid M.H.; Ensell, G.; Evans, A G R

doi:10.1117/12.476666

Cited by 25 publications

(10 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2003, photonic bandgap waveguides with low losses were demonstrated at IBM [23], while Raman gain in silicon waveguides was found at the University of California www.lpr-journal.org in Los Angeles (UCLA) [24], and the modelling of highspeed pn-junction-based optical modulators was envisaged at the University of Surrey [25]. During the same year, photonic crystal nanocavities with quality factors Q > 10 4 were demonstrated in Japan [26].…”

Section: Introduction: Silicon Photonicsmentioning

confidence: 99%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

View full text Add to dashboard Cite

Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.

show abstract

Section: Introduction: Silicon Photonicsmentioning

confidence: 99%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

View full text Add to dashboard Cite

show abstract

“…The spectacular efforts have been invested in this field. Many vital breakthroughs have taken place on light emitters [32][33][34][35], waveguides [36][37][38][39], modulators [40,41] resonators [42][43][44], and detectors [45]. Silicon photonics also catch the attention of the interest of industry.…”

Section: Lifespan Of Silicon Photonicsmentioning

confidence: 97%

Advancements in Silicon Photonics

Ahmed

Siyal

Adeel

et al. 2013

Optical Signal Processing by Silicon Photonics

View full text Add to dashboard Cite

This chapter focuses on the gradual and time-needed advancements made in the field of photonics. It also highlights the evolution taken place in the devices which are being used and prepared for future trends as well. The traditional and nontraditional motivations regarding selection of silicon as the enabling material for the usefulness of photonics and SOI waveguides and their types are also presented with great emphasis and depth. Reviewing the silicon photonics technology, it is evident that this field has grown rapidly in the recent years. The revolutionized advancement in information technology has spread the interest of nonlinear photonics to every corner of the world. Presently installed power-hungry infrastructure of telecom and information industry has to be improved or changed with silicon-based energy efficient green photonics. The data-hungry new telecom applications, super computer interconnection structures, sensors, and medicine are a few examples of ever increasing Keywords Silicon photonics • Silicon-on-insulator waveguides • Waveguides

show abstract

“…Trench isolation was proposed as a means of achieving carrier confinement, by Hewitt et al [4], who predicted that employing lateral trench isolation on either side of the modulator improved both the direct-current (dc) and transient devices performances by up to 74% and 18% respectively. Following these principles and a trend of reduction in waveguide size, in 2002 Png et al [5], modelled devices of similar geometry, but with improved performance [6][7][8]. In particular a series of devices were modelled with bandwidths ranging from 70 MHz to greater than 1 GHz.…”

Section: 3mentioning

confidence: 99%

40 Gb/s high-speed silicon modulator for TE and TM polarisation

2011

View full text Add to dashboard Cite

The workhorse of future high speed short reach interconnect technology will be the optical modulator. These devices in silicon have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Hence, the need for devices with compact real estate, broadband characteristics, operating at high speed and working for both polarisation is of outmost importance. Here we describe the approach taken at Surrey to meet these requirements from the early days to the more recent work where some initial data are introduced. The recent all-silicon optical modulator uses a CMOS compatible fabrication and demonstrates high data rate with large extinction ratio for TE and TM polarisations. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to facilitate a high yield, reliable fabrication process.

show abstract

Development of small silicon modulators in silicon-on-insulator (SOI)

Cited by 25 publications

References 8 publications

Nanosilicon photonics

Nanosilicon photonics

Advancements in Silicon Photonics

40 Gb/s high-speed silicon modulator for TE and TM polarisation

Contact Info

Product

Resources

About