Development of Thermal Runaway Preventing ZnO Varistor for Surge Protective Device

Jeoung, Tae-Hoon; Kim, Young-Sung; Nam, Sung-Pill; Lee, Seung Hwan; Kang, Jeong Wook; Kim, Jea-Chul; Lee, Sung-Gap

doi:10.1166/jnn.2014.10067

Cited by 7 publications

(5 citation statements)

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“…ZnO nanostructures have been widely applied in optoelectronic devices because of their unique optical and electrical properties. Moreover, their application in devices, such as field-effect transistors, 19,20 ultraviolet (UV) photosensors, 21,22 UV light-emitting diodes, 23 glucose sensors, 24,25 varistors, 26 gas sensors, 27 laser diodes, 28 surface acoustic wave (SAW) devices, 29 solar cells, 30,31 memory devices, 32,33 and field emission (FE) devices, 34 is promising.…”

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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“…The output waveforms measured using three cores and distribution of current using the AWG9 The output of the current transformer (toroidal coil) due to the surge current is proportional to the time derivative of the surge current, as shown in Equation (3). The test setup is shown in Figure 10.…”

Section: Signal Conditioning Circuitmentioning

confidence: 99%

“…Thermal runaway tends to result in electrical hazards, such as short circuits or explosions. Thus, the MOV is designed with a thermal fuse spring or thermal fuse to prevent thermal runaway [3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

A Low-Cost Surge Current Detection Sensor with Predictive Lifetime Display Function for Maintenance of Surge Protective Devices

Lee

2020

Sensors

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In this study, a low-cost surge current detection sensor (SCDS) that can measure high current surges using a low-current toroidal coil is proposed for maintenance of a surge protective device (SPD). The proposed SCDS is designed to display the predicted lifetime of the SPD based on the magnitude of surge current and number of surges. In addition, a method for measuring high surge current using a toroidal coil that can usually measure only low current is proposed. A lightning strike counter consists of a microcontroller with a low-power liquid crystal display (LCD) driver, 3 VDC lithium battery, and signal conditioning circuit that converts amplitude information of the surge current into duration information of a negative pulse to facilitate processing in the microcontroller. In this paper, we propose a software algorithm that can calculate the remaining lifetime of SPD based on the amplitude and number of surge currents. There is also an option to select the capacity of the surge protective device and the number of phase lines, allowing it to assess the predicted lifetime for various types of Class II SPDs. The proposed SCDS is measured as 7.2 μA from the battery power consumption test, and the service life is calculated to be 11.1 years. It meets the International Standard IEC62561-6 test conditions of the lightning strike counter and is expected to be useful in the maintenance of SPDs and lightning protection systems.

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“…The internal lightning protection system consists of equipotential bonding and electrical separation from the external lightning protection equipment. In addition, surge protective devices are used to protect electrical equipment inside buildings [ 8 , 9 , 10 , 11 , 12 , 13 ]. The Seohae Bridge, a cable bridge in Korea, experienced a fire accident on 3 December 2015, resulting in social consequences and economic losses of approximately USD 30 million, including human accidents and traffic paralysis [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

A Cost-Effective Lightning Current Measuring Instrument with Wide Current Range Detection Using Dual Signal Conditioning Circuits

Lee

2023

Sensors

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Lightning strikes can cause significant damage to critical infrastructure and pose a serious threat to public safety. To ensure the safety of facilities and investigate the causes of lightning accidents, we propose a cost-effective design method for a lightning current measuring instrument that uses a Rogowski coil and dual signal conditioning circuits to detect a wide range of lightning currents, ranging from hundreds of A to hundreds of kA. To implement the proposed lightning current measuring instrument, we design signal conditioning circuits and software capable of detecting and analyzing lightning currents from ±500 A to ±100 kA. By employing dual signal conditioning circuits, it offers the advantage of detecting a wide range of lightning currents compared to existing lightning current measuring instruments. The proposed instrument has the following features: First, the peak current, polarity, T1 (front time), T2 (time to half value), and Q (amount of energy of the lightning current) can be analyzed and measured with a fast sampling time of 380 ns. Second, it can distinguish whether a lightning current is induced or direct. Third, a built-in SD card is provided to save the detected lightning data. Finally, it provides Ethernet communication capability for remote monitoring. The performance of the proposed instrument is evaluated and validated by applying induced and direct lightning using a lightning current generator.

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Development of Thermal Runaway Preventing ZnO Varistor for Surge Protective Device

Cited by 7 publications

References 0 publications

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

A Low-Cost Surge Current Detection Sensor with Predictive Lifetime Display Function for Maintenance of Surge Protective Devices

A Cost-Effective Lightning Current Measuring Instrument with Wide Current Range Detection Using Dual Signal Conditioning Circuits

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