Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors

Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

“…The transient current technique (TCT) is widely employed 4,5 in characterization of the irradiated detectors by exploiting rather high sensitivity (existence of a response at rather low excess carrier densities) of this method and its ability to separate the carrier drift parameters for electrons and holes. However, the excess carrier capture/recombination parameters are extracted indirectly from the measured TCT transients 4 by using a procedure for the re-constructing of the shape and amplitude of the measured TCT signal.…”

“…Examination of leakage current, of carrier generation lifetime is performed by thermal stimulated current (TSC), 1 by capacitance deep level transient spectroscopy (DLTS), 2,3 and by exploiting measurements of drift current transients (TCT), 4,5 in analysis of the post-irradiation state of devices.…”

Carrier drift and diffusion characteristics of Si particle detectors measuredin situduring 8 MeV proton irradiation

“…The model of TCT characteristics [3][4][5][6] based on the Shockley-Ramo's theorem [11] has been shown [12][13][14], however, not to be applicable for under-depleted diodes. In order to understand the nearly independent shape and duration of ICDC transients and to validate the procedures used to extract material parameters, the formation of the injected charge induced diode current (ICDC) transients requires a more detailed discussion.…”

“…The transient current technique (TCT) [3][4][5][6] is widely used in Si detectors characterisation for both under-and over-depletion diode operational regimes. The model of TCT characteristics [3][4][5][6] based on the Shockley-Ramo's theorem [11] has been shown [12][13][14], however, not to be applicable for under-depleted diodes.…”

“…Examination of leakage current, of carrier generation lifetime by thermally stimulated current (TSC) [1], by deep level transient spectroscopy (DLTS) [2,3] and by exploiting measurements of current transients (TCT) [4][5][6][7][8] is employed in the analysis of the post-irradiation state of devices. The evolution of radiation defects and their manifestation in operational parameters of particle detectors is important.…”