Device Architectures for High-speed SiGe HBTs

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

“…Current development aims to integrate high-performance SiGe HBT devices [28] into a full 130-nm BiCMOS flow. As reported in [33], HBT f t / f max values of 470/610 GHz have been achieved within a full BiCMOS environment opening new applications for SiGe BiCMOS in the THz frequency range.…”

“…As the current state-of-the-art, a SiGe HBT f t / f max performance of 505/720 GHz was presented in [28], enabled by an optimized vertical profile, lateral device scaling, a decreased base and emitter resistance via rapid thermal annealing, and a low-temperature backend. When integrated in a 130-nm BiCMOS process environment, f t / f max of 470 GHz/610 GHz has been achieved [33]. Both characteristics are shown in Fig.…”

“…This article focuses on the commercially most important applications of radar and wireless communications. While 24-GHz automotive radar and Ka-band satellite communication (26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40) have been around for years, only the recent launch of 5G around 28/39 GHz has triggered the millimeter-wave hype. The technology relies on phased arrays This work is licensed under a Creative Commons Attribution 4.0 License.…”

“…18. (a) Standalone SiGe HBT module f t / f max performance and (b) reduction if integrated into a 130-nm BiCMOS process environment[33]. (c) Cross section of a 250-nm BiCMOS EPIC technology including Ge-photodiodes and waveguides in local SOI and SiGe HBTs in an adjacent Si-bulk region[174].…”

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

“…As an intermediate result, HBTs with peak f T /f MAX values of 470 GHz/610 GHz have been demonstrated in the BiCMOS process ( Fig. 1) [8].…”