Device modelling of non-fullerene organic solar cell with inorganic CuI hole transport layer using SCAPS 1-D

Nithya, K.; Sudheer, K.

doi:10.1016/j.ijleo.2020.164790

Cited by 45 publications

(21 citation statements)

References 57 publications

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“…There are many alternatives to PEDOT:PSS, but graphene oxide (GO) is utilized as its alternative in this simulation. All simulation parameters for HTM layers in the structure are carefully chosen from the reported experimental data and different works available in the literature [ 35 , 36 , 37 , 40 , 41 , 66 , 67 ].…”

Section: Resultsmentioning

confidence: 99%

“…This is due to the increased cell conductivity, which causes internal power depletion and series resistance to decrease. The reduction in series resistance increases Jsc, FF, and PCE values [ 36 , 37 ]. FF and PCE improve as doping concentrations rise further, but JSC and Voc drop.…”

Section: Resultsmentioning

confidence: 99%

“…The whole set of simulation parameters for the designed layers was selected from the literature published in its entirety in [ 36 , 37 , 40 , 41 , 50 , 51 , 52 , 53 , 54 , 55 ]. Numerous material properties must be addressed before simulation, including the donor and acceptor density (N A , N D ), electron and hole mobility (µ n , µ p ), etc.…”

Section: Numerical Modeling Of Devicementioning

confidence: 99%

“…They used CuI as a hole transport layer (HTL), claiming it is more efficient than traditional structures. Under optimal conditions, their device achieves an efficiency (PCE) of 15.68% [ 36 ]. Aziz and colleagues modelled and discovered that the NFA bulk heterojunction (BHJ) solar cell performed very well under optimization with few parameters.…”

Section: Introductionmentioning

confidence: 99%

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Performance Analysis and Optimization of a PBDB-T:ITIC Based Organic Solar Cell Using Graphene Oxide as the Hole Transport Layer

et al. 2022

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The hole transport layer (HTL) in organic solar cells (OSCs) plays an imperative role in boosting the cell’s performance. PEDOT: PSS is a conventional HTL used in OSCs owing to its high design cost and instability issues. It can be replaced with graphene oxide to increase the cell performance by overcoming instability issues. Graphene oxide (GO) has gained popularity in recent years for its practical use in solar energy due to its remarkable mechanical, electrical, thermal, and optical properties. This work uses SCAPS-1D to examine the results of graphene oxide (GO)-based organic solar cells by giving a comparison between the performance of absorber layers and a GO-based HTL to see which absorber material interacts more strongly with GO. The absorber layer PBDB-T:ITIC paired with GO as HTL outperforms the other absorber layers due to its better optical and electrical characteristics. Numerical simulations are performed within the SCAPS software at various absorber layer thicknesses, defect densities, and doping values to assess the influence on device performance and efficiency. After cell optimization, the best efficiency of an improved OSC is found to be 17.36%, and the outcomes of the simulated OSC are referenced to the results of the experimentally implemented OSC. These results provide a possible future direction for developing GO-based OSCs with higher efficiency.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Numerical Modeling Of Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Performance Analysis and Optimization of a PBDB-T:ITIC Based Organic Solar Cell Using Graphene Oxide as the Hole Transport Layer

et al. 2022

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“…9b, the efficiency of 10.59%, V oc of 1.87 V, J sc of 6.39 mA/cm 2 and FF of 0.88 are obtained. (Shikoh et al 2020;Bruzzi et al 2020;Nithya and Sudheer 2020). After optimizing, we achieved the optimum values of , and , (Jamal et al 2019;Rai et al 2020;Teimouri et al 2020).…”

Section: Effect Of Doping Concentration (Nd) Of Sno2mentioning

confidence: 96%

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

2021

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Double perovskite, Cs 2 AgBiBr 6 , is introduced as a lead-free perovskite solar cell. Device modeling of Cs 2 AgBiBr 6 (DP) was accomplished to obtain the optimum parameters using the Solar Cell Capacitance Simulator (SCAPS). Two devices with two different hole transport layers (HTLs) were investigated, including P 3 HT and Cu 2 O. For both devices with different HTLs, an optimal thicknesses of 1200 nm and defect densities of 1.0 ×10 14 cm -3 for DP layer were attained. For both HTLs, conduction band offset, CBO, is -0.21 eV and valence band offset, VBO, is +0.16 eV. For shallow acceptor doping concentration of P 3 HT and Cu 2 O, the values of 5.0 × 10 19 and 5.0 × 10 17 cm −3 were obtained, respectively. As far as the shallow donor density of electron transport layers (ETLs) is concerned, for both cases, the optimum value of 5.0 × 10 19 cm -3 were achieved. For capture cross section, , , in absorber layer for both HTLs, the optimal value at , of 10 −20 cm 2 for , (defect density of DP) is 10 16 cm −3 , at , of 10 −19 cm 2 for , is 10 15 cm −3 , at , of 10 −18 cm 2 for , is 10 14 cm −3 , at , of 10 −17 cm 2 for , is 10 13 cm −3 , and at , of 10 −16 cm 2 for , is 10 12 cm −3 . For P 3 HT device, the interface defect density of P 3 HT/Cs 2 AgBiBr 6 is occurred at 1.0×10 14 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 9 cm -2 . For Cu 2 O device, the interface defect density of Cu 2 O/ Cs 2 AgBiBr 6 is befallen at 1.0×10 13 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 10 cm -2 . As for radiative recombination, for P 3 HT device, the optimal value is happened at 2.3×10 -13 cm 3 /s, however, for Cu 2 O device is occurred at 2.3×10 -12 cm 3 /s. Finally, for P 3 HT device, a maximum power conversion efficiency, PCE, of 11.69% (open-circuit voltage, V oc , of 2.02 V, short-circuit current density, J sc , of 6.39 mA/cm 2 , and fill-factor, FF, of 0.90 (90% )) were achieved, and for Cu 2 O device, a PCE of 11.32% (V oc of 1.97 V, J sc of 6.39 mA/cm 2 , and FF of 0.895 (89.5% )) were attained. This is the highest efficiency for Cs 2 AgBiBr 6 double perovskite solar cell which was achieved till now. Finally, our results are providing towards fabricating a lead-free and inorganic solar cell.Keywords Cs 2 AgBiBr 6 . Double perovskite solar cell. Lead-free perovskite. Conduction band offset (CBO). Valence band offset (VBO). SCAPS

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Enhanced efficiency, durability and reproducibility of non‐fullerene acceptor organic solar cell with NiO as hole transport material: A computational study

Bhargava

2022

Intl J of Energy Research

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The non-fullerene acceptor (NFA) based organic solar cells (OSCs) are gaining popularity owing to their lucrative properties like better stability, easy fabrication and broad absorption range which their fullerene-based counterparts fail to offer. This report presents a simulation-based comparison of NFA OSCs modelled by incorporating two different hole transport layers (HTLs) namely poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) and nickel oxide (NiO) using SCAPS-1D. The performance analysis of cells are performed on the basis of variations in current density-voltage (J-V), quantum efficiency-wavelength, recombination rate-depth (RR-x), Nyquist plots and performance metrics: (a) open-circuit voltage (V oc ); (b) short-circuit current density (J sc ); (c) fill-factor (FF); and (d) power conversion efficiency (η). Furthermore, the effect of HTL/absorber interfacial defect density towards the performance variation in cells is also compared. Furthermore, the durability assessment of cells is carried out in terms of performance degradation occurring due to gradual progression of potential-induced degradation effect inside the cells. Moreover, the reproducibility analysis is performed with respect to variations occurring in the carrier mobility of absorber layer. The results reveal better efficiency, durability and reproducibility of cell with NiO as HTL. The report highlights the importance of HTL properties towards improving the commercialization prospects of NFA OSCs.

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Device modelling of non-fullerene organic solar cell with inorganic CuI hole transport layer using SCAPS 1-D

Cited by 45 publications

References 57 publications

Performance Analysis and Optimization of a PBDB-T:ITIC Based Organic Solar Cell Using Graphene Oxide as the Hole Transport Layer

Performance Analysis and Optimization of a PBDB-T:ITIC Based Organic Solar Cell Using Graphene Oxide as the Hole Transport Layer

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Enhanced efficiency, durability and reproducibility of non‐fullerene acceptor organic solar cell with NiO as hole transport material: A computational study

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