Abstract:The complexity of ion implant applications in IC fabrication has grown significantly since becoming the preferred process for doping semiconductors. Aggressive device scaling over the last decade raised unique challenges. This resulted in the invention of novel implant applications to address device scaling driven issues and the development of new generations of ion implanters. These newly developed tools are capable of delivering a wide variety of ion beams of traditional doping and non-doping species, with m… Show more
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