Device Scaling: Going from “Micro-” to “Nano-” Electronics

Božanić, Mladen; Sinha, Saurabh

doi:10.1007/978-3-030-44398-6_1

Cited by 1 publication

(1 citation statement)

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“…The growth in research in this direction is driven by unresolved problems in the transport mechanism of charge carriers due to the miniaturization of electronics propelled by the development of micro and nano-electronics based semiconductor devices [8][9][10]. It has been reported long back that electrons and holes (e-h) in semiconductors can be considered as semiconductor plasma systems [11].…”

Section: Introductionmentioning

confidence: 99%

Temperature-induced disruptive growth rate behavior due to streaming instability in semiconductor quantum plasma with nanoparticles

Sharma,

Luitel,

Ali

et al. 2024

J. Phys.: Condens. Matter

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The nature of the growth rate due to streaming instability in a Semiconductor quantum plasma implanted with nanoparticles has been analyzed using the Quantum Hydrodynamic Model. In this study, the intriguing effect of temperature, beam electron speed, and electron-hole density on growth rate and frequency is investigated. The results show that the growth rate demonstrates a nonlinear behavior, strongly linked to the boron implantation, beam electron streaming speed and quantum correction factor. A noteworthy finding in this work is the discontinuous nature of the growth rate of streaming instability in boron implanted semiconducting plasma system. The implantation leads to a gap in the growth rate which further gets enhanced upon increase in concentration of implantation. This behavior is apparent only for a specific range of the ratio of thermal speed of the electrons to that of the holes.

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Section: Introductionmentioning

confidence: 99%