Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

Wang, Lu; Wang, Jinyi; Wen, Dianzhong

doi:10.3390/nano10081491

Cited by 9 publications

(5 citation statements)

References 43 publications

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“…Qu proposed a novel one-write-multiread RRAM based on a protein film, forming an Ag/EA/ITO/polyethylene terephthalate (PET) structure [ 17 ]. Wang controlled the current switching ratio of Al/graphene oxide (GO)/EA/GO/ITO devices using varying concentrations of GO [ 18 ]. Other studies have demonstrated that RRAMs made from egg proteins are water soluble [ 19 ], can successfully simulate the memory behaviour of biological synapses [ 20 , 21 , 22 ], can be flexibly transferred to many unconventional substrates [ 23 ], and can realize the full memory logic block of the non-gate, or-gate, and and-gate [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

2021

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In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

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Section: Introductionmentioning

confidence: 99%

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

2021

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“…Electronic devices made of it have strong durability and have been applied to one-writeread-many memory devices, [14] field effect transistors, [15] transistors, [16,17] and supercapacitors. [18] Memristors made of egg albumen have nonvolatile resistive switching properties; [19][20][21] However, under the same external stimulus, the resistive state of the device usually fluctuates in different write cycles. This resistance switching variability is also an important challenge for neuromorphic computing and future machine learning.…”

Section: Introductionmentioning

confidence: 99%

First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion

Wang,

Yang,

et al. 2023

Adv Elect Materials

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The realization of artificial synapses based on biomaterials is of great significance for the development of environmentally friendly neuromorphic hardware systems and artificial intelligence. In this sense, a bioartificial synapse composited with egg albumen (EA) and multiwalled carbon nanotubes (MWCNTs) is fabricated. Based on the adjustable weight of the artificial synapse, the plasticity of electrical synapses is explored. Due to the photogenerated carriers and thermoelectric effects of carbon nanotubes, the device has optoelectronic properties, so the optoelectronic synaptic plasticity of the device is explored under light pulses. The device is well suited for biological synapses and shows great potential for applications in future high‐density storage and neuromorphic computing systems. In addition, to further study the physical mechanism of the conductive process of the device, the electrical characteristics of the contact interface between carbon nanotubes doped with Fe substitution and the upper electrode Al are mainly analyzed by first principles, and the adsorption, charge distribution, and band structure between them are theoretically studied.

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“…Because of its advantages, such as a simple structure, simple processing, low cost, low power consumption, and compatibility with CMOS processes, it has received wide attention [ 6 , 7 , 8 , 9 , 10 , 11 , 12 ]. At present, the materials used to fabricate memristors include perovskites [ 13 ], metal oxides [ 14 ], natural biomaterials [ 7 , 15 , 16 ], and organic dielectric materials [ 17 ]. Compared with other materials, carbon has the advantages of biocompatibility, higher thermal stability, and a stronger chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

et al. 2021

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Nanocarbon materials have the advantages of biocompatibility, thermal stability and chemical stability and have shown excellent electrical properties in electronic devices. In this study, Al/MWCNT:GQD/ITO memristors with rewritable nonvolatile properties were prepared based on composites consisting of multiwalled carbon nanotubes (MWCNTs) and graphene quantum dots (GQDs). The switching current ratio of such a device can be tuned in two ways. Due to the ultraviolet light sensitivity of GQDs, when the dielectric material is illuminated by ultraviolet light, the charge capture ability of the GQDs decreases with an increasing duration of illumination, and the switching current ratio of the device also decreases with an increasing illumination duration (103–10). By exploiting the charge capture characteristics of GQDs, the trap capture level can be increased by increasing the content of GQDs in the dielectric layer. The switching current ratio of the device increases with increasing GQD content (10–103). The device can be programmed and erased more than 100 times; the programmable switching state can withstand 105 read pulses, and the retention time is more than 104 s. This memristor has a simple structure, low power consumption, and enormous application potential for data storage, artificial intelligence, image processing, artificial neural networks, and other applications.

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Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

Cited by 9 publications

References 43 publications

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

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