Diamond FET Biosensor Fabrication and Application

Abstract

Diamond is renowned as the ultimate semiconductor thanks to its exceptional physical properties, including unmatched hardness, exceptional wear resistance, superior mechanical and tribological characteristics, and high fracture strength. Diamond solution-gate field-effect transistors (D-SGFETs) leverage these advantages, along with their outstanding high-power and high-frequency performance, excellent thermal conductivity, wide bandgap, high carrier mobility, and rapid saturation speed. These features make D-SGFETs highly promising for fast and precise biomedical detection applications. This paper provides a comprehensive review of the fabrication techniques for diamond SGFETs, encompassing diamond film synthesis, surface conduction layer formation, source/drain fabrication, and FET packaging. Furthermore, the study delves into the surface functionalization of diamond SGFETs and their diverse applications in biomedical detection. Finally, the paper discusses the future outlook of diamond SGFETs in advancing biomedical detection technologies.