Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric

Torii, Kazuyoshi; Aoyama, T.; Kamiyama, Satoshi; Tamura, Y.; Miyazaki, S.; Kitajima, Hiroshi; Arikado, T.

doi:10.1109/vlsit.2004.1345423

Cited by 16 publications

(14 citation statements)

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“…9,10) The leakage current through Hf-based dielectrics dominated by trap-assisted tunneling has been reported. 17) In this work, the leakage current density of a TaN/25 nm SiO 2 /Pd NCs/5 nm HfAlO/ Si structure is much lower than that of a TaN/Pd NCs/5 nm HfAlO/Si by at least 7 orders of magnitude. It is considered that the charging and discharging mainly occur between Pd nanocrystals and the Si substrate through the HfAlO tunneling layer for all the annealed samples.…”

Section: Resultsmentioning

confidence: 64%

“…Al acts as a network modifier by breaking Al-O-Al bonds and producing nonbridging oxygen centers in a HfAlO film. 17) It is considered that neutral traps originate from nonbridging oxygen centers and that more thermally induced neutral traps in HfAlO around Pd NCs are obtained with increasing annealing temperature. Some researchers reported that some intrinsic traps in Hf-based oxides can be obtained after deposition and that these intrinsic traps are used in NVM application.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

Kang¹,

Liao

Lin³

et al. 2010

Jpn. J. Appl. Phys.

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Pd nanocrystals (NCs) are successfully embedded in a TaN/SiO 2 /HfAlO/Si structure. The initial memory window increases at a higher rate with increasing fabrication temperature of Pd NCs compared with the linear variation of Pd NC density, which is related to the thermally induced neutral traps in the HfAlO film around Pd NCs. After manufacturing a TaN/SiO 2 /Pd NCs/HfAlO/Si/Al structure, the subsequent N 2 plasma treatment is conducted at 300 C for 3 min. The number of leakage current paths in the SiO 2 blocking layer adjacent to TaN is clearly reduced, but that of leakage current paths in SiO 2 /HfAlO around Pd NCs is slightly increased owing to the thermal stress. The thermally induced neutral traps in the HfAlO film around the Pd NCs can be passivated by nitrogen atoms, which leads to the improvement of the final memory window for the Pd NC samples fabricated at 600-700 C. However, the intrinsic traps in the HfAlO film play an important role in memory characteristic and the final memory window is reduced by thermal densification for the Pd NC samples fabricated at 500 C.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

Kang¹,

Liao

Lin³

et al. 2010

Jpn. J. Appl. Phys.

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“…20 Oxygen vacancies in HfO 2 have been theoretically predicted by ab initio calculations 21,22 and observed experimentally as well. 18 and 19͒ and severely affects the electrical behavior of the dielectric films, such as leakage current and charge scattering.…”

Section: Effects Of Y Doping On the Structural Stability And Defect Pmentioning

confidence: 78%

Effects of Y doping on the structural stability and defect properties of cubic HfO2

Chen

Hou

Gong

et al. 2008

Journal of Applied Physics

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First-principles calculations have been performed to study the structural and electronic properties of pure and Y-doped cubic HfO 2 . It is found that Y doping in HfO 2 would increase the stability of the cubic phase relative to the monoclinic phase by reducing the energy difference and the phase transition pressure. This result is consistent with the observed stabilization of the cubic phase of HfO 2 by the addition of Y. The calculated formation energy of the V O -Y Hf complex defect in different charged states indicates that the single positively charged state ͑V O -Y Hf ͒ + is more stable than the neutral state ͑V O -Y Hf ͒ 0 and the double positively charged state ͑V O -Y Hf ͒ ++ in Y-doped cubic HfO 2 . Because the number of d-electrons of Y is less than that of Hf by one and substitutional Y for Hf introduces holes in the oxygen p-band, Y doping would make the highest occupied defect level induced by ͑V O -Y Hf ͒ + fall into the valence band rather than the energy gap, which explains the experimental observation that gap states related to oxygen vacancy defects become nondetectable in Y-doped HfO 2 films.

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“…These carriers can be separated by a carrier separation method using a n + gate p-channel metaloxide-semiconductor field-effect-transistor (p-MOS-FET) and a p + gate n-MOSFET [1][2][3]. Recently, it has been reported that holes are the dominant carrier in the leakage current for n + gate p-channel metal-insulator-semiconductor field-effect-transistors (p-MISFETs) with high-k dielectric stack [4][5][6]. However, the origin of the hole current and the carrier conduction mechanism have not been clarified yet.…”

Section: Introductionmentioning

confidence: 99%

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Mizubayashi

Yasuda

Okada

et al. 2005

Microelectronics Reliability

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Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric

Cited by 16 publications

References 0 publications

Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory

Effects of Y doping on the structural stability and defect properties of cubic HfO2

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

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