Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

Aspnes, D. E.; Studna, A. A.

doi:10.1103/physrevb.27.985

Cited by 3,790 publications

(1,614 citation statements)

References 116 publications

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“…5. While the E 1 and E 1 þ D 1 peaks have the correct relative intensity as compared to well established references, 33,45,46 the relative intensity of the E 2 peak is lower by about a factor of 5. This is symptomatic of either an oxide of about 1 nm thickness or nanoscopic roughness on the surface.…”

Section: Discussionmentioning

confidence: 93%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

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The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural properties of the alloys such as soluble Sn concentration, strain distribution, and crystal quality have been characterized by Rutherford backscattering spectrometry, Raman spectroscopy, x ray diffraction, and transmission electron microscopy. It is shown that it is possible to produce a high quality alloy with up to 6.2 at. %Sn. The optical properties and electronic band structure have been studied by spectroscopic ellipsometry. The introduction of substitutional Sn into Ge is shown to either induce a splitting between light and heavy hole subbands or lower the conduction band at the Γ valley. Limitations and possible solutions to introducing higher Sn content into Ge that is sufficient for a direct bandgap transition are also discussed.

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Section: Discussionmentioning

confidence: 93%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

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“…In addition, the experimental results were checked against PC1D[14] simulations of the cell structure. The dielectric function corresponding to the full layer stack was fitted to an optical model using the dispersion curve of monocrystalline silicon for the epi-layer, as obtained by Aspnes [15], a Tauc-Lorentz dispersion formula for the amorphous silicon layer [16], as well as layers combining these materials with a void fraction using the Bruggeman effective approximation theory [17].…”

Section: Methodsmentioning

confidence: 99%

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Cariou

Labrune

Cabarrocas

2011

Solar Energy Materials and Solar Cells

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We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 µm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 µm thick cell with an area of 4 cm 2 , without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures.

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“…Before ion bombardment the surfaces of all samples were chemically cleaned in bromomethanol solution to remove all impurities adsorbed from air [7]. Then 3 x 10 16 cm -2 indium dose was implanted into the samples.…”

Section: (131)mentioning

confidence: 99%

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

1999

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GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10 16 cm -2 indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k r corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.

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Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

Cited by 3,790 publications

References 116 publications

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

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