Dielectric measurement using non-contact microwave single probe for dielectric materials

Abstract

A high frequency dielectric measurement method was proposed using a non-contact probe. The microwave reflection intensity was measured for Al 2 O 3 and SrTiO 3 substrates at room temperature as a function of distance between sample and probe. The difference of reflection intensity for Al 2 O 3 and SrTiO 3 substrates was observed in the region where the distance of 0.2 mm between sample and probe, and it was caused from dielectric permittivities of samples. The reflection coefficient of sample was estimated in comparison with results of electromagnetic simulation. The reflection intensity for Al 2 O 3 and SrTiO 3 substrates was transformed to dielectric permittivity at reflection intensity minimum point.